<p>In organic thin-film transistors (OTFTs), carrier doping is a versatile technique to control and improve their device characteristics. In this study, bottom-gate, bottom-contact (BGBC) p-channel transistors comprised by contact electrodes of highly p-doped layer (p⁺) and a non-doped, intrinsic semiconductor layer (i), so-called p⁺-i-p⁺ type transistors, were newly fabricated by using the transfer printing of poly(3-hexylthiophene-2,5-diyl) (P3HT) films. A uniform P3HT thin layer was formed onto a poly(dimethylsiloxane) (PDMS) elastomer by the push coating method, followed by the peel-off and transfer process of P3HT micropatterns via elastomer stamping with the aid of prepatterned master substrates. Source-drain p⁺ layers were prepared by liquid-phase doping of the P3HT micropatterns with 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ) as an acceptor dopant. Then, undoped i stripes were deposited onto the p⁺ contact electrode patterns by the transfer printing, which enabled us to construct p⁺-i-p⁺ type polymer transistors with hydrophobic CYTOP-coated SiO₂ gate insulators. The prepared devices presented p-channel, normally-off operation with no gate-sweep hysteresis, suggesting that the appropriate combination of printing and molecular doping techniques can pave the way toward the device design of all-organic transistors.</p>