<p>Resistive random-access memory (RRAM) is a potential next-generation memory technology, known for its large storage and efficient switching. In this work, flexible 2D materials viz. MoS₂ and reduced graphene oxide (rGO) are explored for RRAM applications. MoS₂ offers excellent switching characteristics and stability, while rGO improves conductivity and facilitates charge transport. The synergy between MoS₂ and rGO structures results in lower power consumption, reliable resistive switching, and enhanced endurance. The novelty in the work is related to the material property correlation with the resistive switching behavior of rGO and MoS₂-rGO-based active layer RRAM devices. Based on material analysis conducted on hydrothermally synthesized pure MoS₂, rGO and hybrid MoS₂-rGO, MoS₂-rGO_4.5 hybrid material with higher weight percentage of rGO is chosen as hybrid active layer for RRAM, on account of its well-formed morphology with strong chemical binding. The electrical performance of spin-coated RRAM device with hybrid MoS₂-rGO_4.5 and pure rGO as active layer are evaluated and compared. The fabricated hybrid Ag/MoS₂-rGO_4.5/ITO RRAM devices show novel unipolar resistive switching behavior with multistate characteristics, resulting in better performance with enhanced I_ON/I_OFF of 479 at low V_SET of 0.97&#xa0;V, making it suitable for low power high-storage memory applications.</p>