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<p>Formamidinium Lead Halide (FAPbI<sub>3</sub>) is familiar for optoelectronic device applications due to unique behaviours like better light absorption, efficient exciton dissociation, and high charge carrier mobility. However, the effect of varying thicknesses of the FAPbI<sub>3</sub> absorber layer on the efficiency and stability of devices, especially when paired with different transport layers, has not been extensively studied. This research investigates the performance of perovskite-based electronic materials using a multilayer setup that includes layers of SnO<sub>2</sub> (20&#xa0;nm), FAPbI<sub>3</sub>, NiOx (30&#xa0;nm), and PCBM (20&#xa0;nm). The FAPbI<sub>3</sub> absorption layer is varied in thicknesses of 300, 400, and 500&#xa0;nm to evaluate how these changes impact device efficiency. The fabrication process involves spin coating, followed by treatment with an antisolvent and heating at 400&#xa0;°C. At a thickness of 500&#xa0;nm, the FAPbI<sub>3</sub> layer exhibits the highest peak intensities, a crystallite size of approximately 35&#xa0;nm, and the lowest optical transmittance, which is below 40%. The absorption coefficient reaches a better value of 9.7 × 10<sup>4</sup>&#xa0;cm<sup>−1</sup>, while the refractive index peaks at 2.7. This configuration also shows the highest electrical conductivity, measured at approximately 2.2 × 10<sup>–3</sup> S/cm, along with a low resistivity of 4.5 × 10<sup>2</sup> Ω·cm. Tauc plot analysis reveals an optical band gap of 1.55&#xa0;eV. Furthermore, J–V characterization indicates a maximum short-circuit current density (J<sub>sc</sub>) of 24.6&#xa0;mA/cm<sup>2</sup> and an open-circuit voltage (V<sub>oc</sub>) of 0.99&#xa0;V, demonstrating robust device performance with minimal recombination losses.</p>

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Featuring of Formamidinium lead halide and enrichment of optoelectronic behaviour of SnO2/FAPbI3/NiOx with PCBM layer

  • 期刊论文

  • 发表日期：

    2025年6月28日

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  • Rathinavelu Venkatesh,
  • Aman Sharma,
  • N Naga Bhooshanam,
  • K. Revathi,
  • Apurv Verma,
  • Mohanavel Vinayagam,
  • Manzoore Elahi M. Soudagar,
  • Sami Al Obaid,
  • Sulaiman Ali Alharbi

摘要

Formamidinium Lead Halide (FAPbI3) is familiar for optoelectronic device applications due to unique behaviours like better light absorption, efficient exciton dissociation, and high charge carrier mobility. However, the effect of varying thicknesses of the FAPbI3 absorber layer on the efficiency and stability of devices, especially when paired with different transport layers, has not been extensively studied. This research investigates the performance of perovskite-based electronic materials using a multilayer setup that includes layers of SnO2 (20 nm), FAPbI3, NiOx (30 nm), and PCBM (20 nm). The FAPbI3 absorption layer is varied in thicknesses of 300, 400, and 500 nm to evaluate how these changes impact device efficiency. The fabrication process involves spin coating, followed by treatment with an antisolvent and heating at 400 °C. At a thickness of 500 nm, the FAPbI3 layer exhibits the highest peak intensities, a crystallite size of approximately 35 nm, and the lowest optical transmittance, which is below 40%. The absorption coefficient reaches a better value of 9.7 × 104 cm−1, while the refractive index peaks at 2.7. This configuration also shows the highest electrical conductivity, measured at approximately 2.2 × 10–3 S/cm, along with a low resistivity of 4.5 × 102 Ω·cm. Tauc plot analysis reveals an optical band gap of 1.55 eV. Furthermore, J–V characterization indicates a maximum short-circuit current density (Jsc) of 24.6 mA/cm2 and an open-circuit voltage (Voc) of 0.99 V, demonstrating robust device performance with minimal recombination losses.