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<p>The scope of this research is the production and characterization of nano SiC added MgB<sub>2</sub> bulk superconductors with high density and homogeneous distribution by in-situ Spark Plasma Sintering (SPS) technique. The densities and phase analyses of the samples were determined by the Archimedes method and X-ray diffraction (XRD), respectively. Scanning electron microscopy (SEM) was utilized to investigate the effects of SiC addition on the microstructure and densification of MgB<sub>2</sub>. The transition temperature (<i>T</i><sub><i>c</i></sub>) was determined from the resistivity-temperature (<i>ρ-T</i>) curve and it was seen that the transition temperature decreased with the increase in the content of SiC. The critical current density (<i>J</i><sub><i>c</i></sub>) of the samples was calculated by using the Bean critical state model, and the critical current density was improved up to 10 wt% SiC addition compared to the pure sample in both low and high field region.</p>

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Influence of SiC content on spark plasma sintered MgB2–SiC superconductors

  • 期刊论文

  • 出版模式：

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  • 发表日期：

    2025年6月23日

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  • Hasan Ağıl,
  • Asli Asiye Agil,
  • Erhan Ayas

摘要

The scope of this research is the production and characterization of nano SiC added MgB2 bulk superconductors with high density and homogeneous distribution by in-situ Spark Plasma Sintering (SPS) technique. The densities and phase analyses of the samples were determined by the Archimedes method and X-ray diffraction (XRD), respectively. Scanning electron microscopy (SEM) was utilized to investigate the effects of SiC addition on the microstructure and densification of MgB2. The transition temperature (Tc) was determined from the resistivity-temperature (ρ-T) curve and it was seen that the transition temperature decreased with the increase in the content of SiC. The critical current density (Jc) of the samples was calculated by using the Bean critical state model, and the critical current density was improved up to 10 wt% SiC addition compared to the pure sample in both low and high field region.