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<p>This work focused on enhancing passivation performance of MoO<sub>3</sub> films to be used as hole-selective contacts for silicon solar cells by performing infrared rapid thermal annealing (RTA). This work investigated RTA impact on the structural, morphological, optical, and optoelectronic properties of MoO<sub>3</sub> films. An emphasis on MoO<sub>3</sub>/c-Si interface was carried on. Annealing at 400&#xa0;°C had improved the crystallinity, density, and uniformity of the MoO<sub>3</sub> layers. An increase in the MoO<sub>3</sub> band gap after RTA annealing was obtained (from 2.88&#xa0;eV for the as-deposited film to 3.36&#xa0;eV for the film annealed at 400&#xa0;°C). The minority carrier lifetime increased by 73.7%, indicating reduced surface recombination. Surface saturation current density decreased after RTA treatment thanks to electronic and structural surface properties improvement. The results showed surface velocity improvement, attributed to the formation of sub-stoichiometric SiO<sub>x</sub> at MoO<sub>3</sub>/Si interface during RTA treatment. These findings confirmed RTA annealing effectiveness in optimizing MoO<sub>3</sub> layers for next-generation solar cells.</p>

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Impact of infrared rapid thermal annealing on molybdenum oxide films for improved surface passivation in textured silicon substrates

  • 期刊论文

  • 发表日期：

    2025年6月27日

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  • C. Ben Alaya,
  • R. Benabderrahmane Zaghouani,
  • M. Bouaicha

摘要

This work focused on enhancing passivation performance of MoO3 films to be used as hole-selective contacts for silicon solar cells by performing infrared rapid thermal annealing (RTA). This work investigated RTA impact on the structural, morphological, optical, and optoelectronic properties of MoO3 films. An emphasis on MoO3/c-Si interface was carried on. Annealing at 400 °C had improved the crystallinity, density, and uniformity of the MoO3 layers. An increase in the MoO3 band gap after RTA annealing was obtained (from 2.88 eV for the as-deposited film to 3.36 eV for the film annealed at 400 °C). The minority carrier lifetime increased by 73.7%, indicating reduced surface recombination. Surface saturation current density decreased after RTA treatment thanks to electronic and structural surface properties improvement. The results showed surface velocity improvement, attributed to the formation of sub-stoichiometric SiOx at MoO3/Si interface during RTA treatment. These findings confirmed RTA annealing effectiveness in optimizing MoO3 layers for next-generation solar cells.