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<p>We report here the anomalous Hall effect in the B2-type disordered Co<sub>2</sub>TiSi (CTS) thin film. The reported values of the anomalous Hall conductivity (AHC) and longitudinal resistivity for the bulk and this thin film Co<sub>2</sub>TiSi material are 55 S/cm, 109 μΩ-cm at 2&#xa0;K [13], 245.26 S/cm, 49.71 μΩ-cm at 10&#xa0;K, respectively. Both the intrinsic and extrinsic scattering contributions to the AHC are present, according to the scaling of the anomalous Hall resistivity with longitudinal resistivity. A cross-sectional transmission electron microscope image suggests the formation of the thick SiO<sub>2</sub> layer between the CTS film and the Si substrate. The skew-scattering contribution to the AHC is probably due to an impurity scattering potential in this disordered material. From the first-principles calculations, we found that the B2-type structural disorder in pure ordered L2<sub>1</sub> structures destroys the half-metallicity, increases the Berry’s curvature, and introduces more charge carriers near the Fermi energy due to the change of the hybridization of atomic orbitals. The Fermi level shifts its position relative to the spin-down channel. Thus, the B2-type positional disorder in this Co<sub>2</sub>TiSi thin film material is helpful for the topological change in the Fermi surface and to get a large AHC value compared to the pure ordered structure.</p>

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Unconventional sizeable anomalous Hall effect in disordered Co2TiSi Heusler alloy thin film: an experimental and theoretical study

  • 期刊论文

  • 发表日期：

    2025年6月24日

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  • Safikul Islam,
  • Sajib Biswas,
  • Niladri Sekhar Kander,
  • Amal Kumar Das

摘要

We report here the anomalous Hall effect in the B2-type disordered Co2TiSi (CTS) thin film. The reported values of the anomalous Hall conductivity (AHC) and longitudinal resistivity for the bulk and this thin film Co2TiSi material are 55 S/cm, 109 μΩ-cm at 2 K [13], 245.26 S/cm, 49.71 μΩ-cm at 10 K, respectively. Both the intrinsic and extrinsic scattering contributions to the AHC are present, according to the scaling of the anomalous Hall resistivity with longitudinal resistivity. A cross-sectional transmission electron microscope image suggests the formation of the thick SiO2 layer between the CTS film and the Si substrate. The skew-scattering contribution to the AHC is probably due to an impurity scattering potential in this disordered material. From the first-principles calculations, we found that the B2-type structural disorder in pure ordered L21 structures destroys the half-metallicity, increases the Berry’s curvature, and introduces more charge carriers near the Fermi energy due to the change of the hybridization of atomic orbitals. The Fermi level shifts its position relative to the spin-down channel. Thus, the B2-type positional disorder in this Co2TiSi thin film material is helpful for the topological change in the Fermi surface and to get a large AHC value compared to the pure ordered structure.