Scholarlink

<p>This study reports a room-temperature fabrication strategy for single-layer TiO<sub>2</sub> RRAM devices and systematically investigates how deposition conditions and electrode materials govern their resistive switching (RS) behavior. By tuning sputtering pressures and oxygen partial pressures during the magnetron sputtering of TiO<sub>2</sub> films on (400)-ITO buffered Si substrate, we revealed their crucial role in modulating the defect distribution and microstructure of TiO<sub>2</sub>, thereby tailoring RS characteristics. Excessive variations in sputtering pressures alter the film structure and defect concentration, affecting switching voltage and stability. Higher oxygen partial pressure reduces oxygen vacancies, negatively impacting device endurance and uniformity. Furthermore, this work uniquely compares the effects of Al, Au, and Cu top electrodes on carrier transport and RS conduction mechanisms. Among them, the Cu/TiO<sub>2</sub>/ITO device exhibits the most favorable performance, including high switching ratios, stable retention, and low power consumption. This is attributed to Cu’s moderate oxygen affinity and its ability to facilitate stable and controllable conductive filament formation. In contrast, Al-based devices suffer from rapid degradation, while Au-based ones show higher switching voltages and greater variability. These findings not only demonstrate a room-temperature fabrication route for efficient TiO<sub>2</sub>-based RRAM but also provide new insights into the role of electrode–oxide interactions in governing RS behavior, offering guidance for designing high-performance memory devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effects of RF-sputtering conditions and top electrode configuration on resistive switching behavior in TiO2-based memory devices

  • 期刊论文

  • 发表日期：

    2025年6月9日

查看全文
  • Wei Zhang,
  • Jun Liu,
  • Luobin Qiu,
  • Fangren Hu

摘要

This study reports a room-temperature fabrication strategy for single-layer TiO2 RRAM devices and systematically investigates how deposition conditions and electrode materials govern their resistive switching (RS) behavior. By tuning sputtering pressures and oxygen partial pressures during the magnetron sputtering of TiO2 films on (400)-ITO buffered Si substrate, we revealed their crucial role in modulating the defect distribution and microstructure of TiO2, thereby tailoring RS characteristics. Excessive variations in sputtering pressures alter the film structure and defect concentration, affecting switching voltage and stability. Higher oxygen partial pressure reduces oxygen vacancies, negatively impacting device endurance and uniformity. Furthermore, this work uniquely compares the effects of Al, Au, and Cu top electrodes on carrier transport and RS conduction mechanisms. Among them, the Cu/TiO2/ITO device exhibits the most favorable performance, including high switching ratios, stable retention, and low power consumption. This is attributed to Cu’s moderate oxygen affinity and its ability to facilitate stable and controllable conductive filament formation. In contrast, Al-based devices suffer from rapid degradation, while Au-based ones show higher switching voltages and greater variability. These findings not only demonstrate a room-temperature fabrication route for efficient TiO2-based RRAM but also provide new insights into the role of electrode–oxide interactions in governing RS behavior, offering guidance for designing high-performance memory devices.