Scholarlink

<p>This paper presents the Molecular Beam Epitaxial (MBE) growth of high-quality CdTe on GaAs (211) oriented substrates. The interface strain due to large lattice mismatch between CdTe epitaxial layers grown directly on GaAs substrates resulted in (133) orientation, as was observed using HRXRD and TEM imaging. Thin ZnTe layers nucleated at Low-Temperature (LT) reduce the lattice mismatch from ~ 14.6 to 6.2% and thus preserve the CdTe homo-orientation. The annealing of the LT nucleated ZnTe layer annihilates and coalesces the defects and reduces the misfit defect density at the interface. Subsequent thick CdTe epitaxial growth was carried out at a temperature of 290&#xa0;°C. The crystal quality of the grown layers was studied using HRXRD FWHM. </p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Effect of lattice mismatch on orientation of MBE grown CdTe on GaAs(211)

  • 期刊论文

  • 发表日期：

    2025年6月2日

查看全文
  • Subodh Tyagi,
  • Udai Ram Meena,
  • Sanjay Kumar,
  • Puspashree Mishra,
  • Rakesh Kumar Pandey,
  • Akhilesh Pandey,
  • Shiv Kumar,
  • Rajendra Singh

摘要

This paper presents the Molecular Beam Epitaxial (MBE) growth of high-quality CdTe on GaAs (211) oriented substrates. The interface strain due to large lattice mismatch between CdTe epitaxial layers grown directly on GaAs substrates resulted in (133) orientation, as was observed using HRXRD and TEM imaging. Thin ZnTe layers nucleated at Low-Temperature (LT) reduce the lattice mismatch from ~ 14.6 to 6.2% and thus preserve the CdTe homo-orientation. The annealing of the LT nucleated ZnTe layer annihilates and coalesces the defects and reduces the misfit defect density at the interface. Subsequent thick CdTe epitaxial growth was carried out at a temperature of 290 °C. The crystal quality of the grown layers was studied using HRXRD FWHM.