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<p>The Ga<sup>3+</sup>-doped LiInO<sub>2</sub> ceramics were synthesized by a solid-state reaction method. In the LiIn<sub>1-<i>x</i></sub>Ga<sub><i>x</i></sub>O<sub>2</sub> ceramics, XRD, Raman spectra, and SEM analysis reveal that the solid solubility between Ga<sup>3+</sup> and In<sup>3+</sup> cations is less than 5%. The doping Ga<sup>3+</sup> could prevent the growth of grains and effective improve the microstructure and relative density. Raman spectra analysis demonstrates that the doping Ga<sup>3+</sup> results in a red shift and broadening of Raman peaks. The bond valence and P–V–L chemical bond theory analysis indicate that the Li<sup>+</sup> exhibited a very strong rattling effect, resulting in an increase in the temperature coefficient of ion polarizability (<i>τ</i><sub><i>αm</i></sub>), thus to influence the <i>ε</i><sub>r</sub> and <i>τ</i><sub><i>f</i></sub>. All the results reveal that the doping Ga<sup>3+</sup> indeed changes the local structure and thus also influences their dielectric properties. And good microwave dielectric properties (<i>ε</i><sub><i>r</i></sub> ~ 13.5, <i>Q</i> × <i>f</i> = 51,200&#xa0;GHz, and <i>τ</i><sub><i>f</i></sub> ~ + 10.1&#xa0;ppm/°C) of LiIn<sub>0.9</sub>Ga<sub>0.1</sub>O<sub>2</sub> ceramic were obtained at the sintering temperature of 940&#xa0;°C.</p>

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Effects of Ga3+ substitution on the grain size, crystal structure, chemical bond characteristics, and microwave dielectric properties of LiInO2 ceramics

  • 期刊论文

  • 发表日期：

    2025年6月2日

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  • Jinwu Chen,
  • Jingjing An,
  • Junqi Chen,
  • Liang Fang

摘要

The Ga3+-doped LiInO2 ceramics were synthesized by a solid-state reaction method. In the LiIn1-xGaxO2 ceramics, XRD, Raman spectra, and SEM analysis reveal that the solid solubility between Ga3+ and In3+ cations is less than 5%. The doping Ga3+ could prevent the growth of grains and effective improve the microstructure and relative density. Raman spectra analysis demonstrates that the doping Ga3+ results in a red shift and broadening of Raman peaks. The bond valence and P–V–L chemical bond theory analysis indicate that the Li+ exhibited a very strong rattling effect, resulting in an increase in the temperature coefficient of ion polarizability (ταm), thus to influence the εr and τf. All the results reveal that the doping Ga3+ indeed changes the local structure and thus also influences their dielectric properties. And good microwave dielectric properties (εr ~ 13.5, Q × f = 51,200 GHz, and τf ~ + 10.1 ppm/°C) of LiIn0.9Ga0.1O2 ceramic were obtained at the sintering temperature of 940 °C.