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<p>AlO<sub>x</sub> films usually present efficient surface passivation on p-type crystalline silicon (c-Si) wafers. Here, AlO<sub>x</sub> nanofilms were deposited by thermal atomic layer deposition (ALD) to explore the passivation potential on n-type c-Si wafers. By adjusting ALD conditions, different surface passivation performance was obtained. To understand this, the passivation mechanisms were analyzed according to the combination of chemical passivation and field-effect passivation. The results indicated that AlO<sub>x</sub> thin films with lower surface roughness, higher uniformity, higher fixed charge density at the AlO<sub>x</sub>/c-Si interface, and lower interface state density could exhibit remarkable passivation performance on n-type c-Si wafers. As a demonstration, a high effective minority carrier lifetime of 5 ms was obtained on the n-type c-Si wafer by 10 nm-thick AlO<sub>x</sub> film.</p>

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Effective surface passivation on n-type crystalline silicon of AlOx thin films by thermal atomic layer deposition

  • 期刊论文

  • 发表日期：

    2025年6月2日

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  • Shiyu Qu,
  • Xiaojie Jia,
  • Lilan Wen,
  • Xiaotong Li,
  • Ju Su,
  • Xianyang Zhang,
  • Hongwei Diao,
  • Chunlan Zhou,
  • Lei Zhao,
  • Wenjing Wang

摘要

AlOx films usually present efficient surface passivation on p-type crystalline silicon (c-Si) wafers. Here, AlOx nanofilms were deposited by thermal atomic layer deposition (ALD) to explore the passivation potential on n-type c-Si wafers. By adjusting ALD conditions, different surface passivation performance was obtained. To understand this, the passivation mechanisms were analyzed according to the combination of chemical passivation and field-effect passivation. The results indicated that AlOx thin films with lower surface roughness, higher uniformity, higher fixed charge density at the AlOx/c-Si interface, and lower interface state density could exhibit remarkable passivation performance on n-type c-Si wafers. As a demonstration, a high effective minority carrier lifetime of 5 ms was obtained on the n-type c-Si wafer by 10 nm-thick AlOx film.