Scholarlink

<p>High-performance p-type transparent conducting copper iodide (CuI) thin films were deposited by direct current magnetron sputtering at room temperature. The microstructure of the CuI film was confirmed by XRD, and the surface morphology and roughness were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM), respectively. The sputtered CuI film exhibits a polycrystalline structure with grain size of about 50&#xa0;nm and a continuous and smooth surface morphology with an RMS roughness of about 2&#xa0;nm. The CuI film shows a&#xa0;high transmittance of about 80% in the visible region and excellent electrical characteristics with a Hall mobility of 1.42 cm<sup>2</sup>/V·s, a resistivity of 0.07 Ω·cm, and a hole concentration of 6.5 × 10<sup>19</sup>&#xa0;cm<sup>–3</sup>. The stability of electrical properties of the CuI film is improved through PMMA encapsulation which prevents the&#xa0;adsorption of air on the surface of&#xa0;CuI film.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Highly smooth and transparent p-type conducting CuI thin film deposited by sputtering

  • 期刊论文

  • 发表日期：

    2025年5月30日

查看全文
  • Jinbao Su,
  • Yaobin Ma,
  • Xinbo Mu,
  • Yiyang Xie

摘要

High-performance p-type transparent conducting copper iodide (CuI) thin films were deposited by direct current magnetron sputtering at room temperature. The microstructure of the CuI film was confirmed by XRD, and the surface morphology and roughness were characterized by scanning electron microscopy (SEM) and atomic force microscope (AFM), respectively. The sputtered CuI film exhibits a polycrystalline structure with grain size of about 50 nm and a continuous and smooth surface morphology with an RMS roughness of about 2 nm. The CuI film shows a high transmittance of about 80% in the visible region and excellent electrical characteristics with a Hall mobility of 1.42 cm2/V·s, a resistivity of 0.07 Ω·cm, and a hole concentration of 6.5 × 1019 cm–3. The stability of electrical properties of the CuI film is improved through PMMA encapsulation which prevents the adsorption of air on the surface of CuI film.