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<p>BPO<sub>4</sub> has low <i>ε</i><sub><i>r</i></sub> (&lt; 5) and an acceptable high <i>Q</i> × <i>f</i> value, while extremely poor sinterability. It showed that, in the present work, an appropriate addition of ZnO could simultaneously enhance the sinterability and microwave dielectric properties of BPO<sub>4</sub> ceramic. The addition of ZnO led to the formation of zinc-phosphates, a small amount of zinc borate, and B<sub>2</sub>O<sub>3</sub> secondary phases, which increased with increasing the ZnO addition. A small amount of ZnO addition increased the dielectric permittivity, <i>Q</i> × <i>f</i> value, and more negative <i>τ</i><sub><i>f</i></sub> value. The 0.97BPO<sub>4</sub>-0.07ZnOceramic exhibit good combined microwave dielectric properties with <i>ε</i><sub><i>r</i></sub> ~ 4.75, <i>Q</i> × <i>f</i> ~ 55,000&#xa0;GHz, and <i>τ</i><sub><i>f</i></sub> ~ -42&#xa0;ppm/<sup>℃</sup>after sintering at 1150&#xa0;°C/2&#xa0;h.</p>

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Effect of the ZnO addition on the sinterability and microwave dielectric properties of BPO4

  • 期刊论文

  • 发表日期：

    2025年5月22日

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  • H. J. Wang,
  • J. M. Wang,
  • J. J. Bian

摘要

BPO4 has low εr (< 5) and an acceptable high Q × f value, while extremely poor sinterability. It showed that, in the present work, an appropriate addition of ZnO could simultaneously enhance the sinterability and microwave dielectric properties of BPO4 ceramic. The addition of ZnO led to the formation of zinc-phosphates, a small amount of zinc borate, and B2O3 secondary phases, which increased with increasing the ZnO addition. A small amount of ZnO addition increased the dielectric permittivity, Q × f value, and more negative τf value. The 0.97BPO4-0.07ZnOceramic exhibit good combined microwave dielectric properties with εr ~ 4.75, Q × f ~ 55,000 GHz, and τf ~ -42 ppm/℃after sintering at 1150 °C/2 h.