Optimizing the structural, optical, hydrophobic, and electrical properties of (Sn/Mg) co-doped ZnO thin films for application as solar cell electrodes
摘要
A simple chemical pneumatic spray pyrolysis technique was employed to prepare thin films of pure ZnO, 1%Mg-doped ZnO, and co-doped 1%Sn/x%Mg (x = 1 and 2) ZnO on ordinary glass substrates at a deposition temperature of 450 °C. The influence of doping and co-doping on the physical properties of the deposited films was systematically investigated. Structural analysis using X-ray diffraction (XRD) and Raman spectroscopy revealed that all samples exhibit a hexagonal crystalline structure with a preferred orientation along the (002) direction, perpendicular to the substrate, with no secondary phases detected. The crystalline quality improved for both doped and co-doped films compared to the undoped ZnO film. Atomic Force Microscopy (AFM) micrographs indicated an increase in surface roughness with doping while co-doping with 1% Sn/1% Mg led to a reduction in roughness compared to pure ZnO. Static contact angle (CA) measurements correlated well with the AFM analysis, showing hydrophobic behavior (CA > 90°) for all elaborated films. This hydrophobic nature is a critical feature for mitigating humidity-induced degradation, thereby enhancing the durability and efficiency of thin-film solar cell layers. Optical analysis demonstrated improved transparency, with average values increasing from 86 to 91%, alongside a widening of the optical bandgap from 3.27 eV to 3.39 eV. The Urbach energy decreased from 329 to 320 meV upon the incorporation of Mg and/or Sn into ZnO. The electrical properties of the ZnO thin films also improved significantly due to the effective incorporation of Sn/Mg, resulting in a low resistivity of 5.44 × 10−3 Ω.cm and a high figure of merit (FOM) of 3.68 × 10−3 Ω−1 for the (1%Sn/1%Mg)-ZnO film. Based on the findings of this study, the ZnO:1%Sn:1%Mg film represents the optimal condition for use as a transparent conducting electrode in thin-film solar cells.