Scholarlink

<p>We have studied the spin injection properties of Co<sub>2</sub>TiSi (CTS)/SiO<sub>2</sub>/n-Si heterostructure by measuring the three-terminal (3T) Hanle signal. We used n-type silicon as the semiconductor and Co<sub>2</sub>TiSi Heusler alloy as the electrode to create a standard three-terminal Hanle device for measuring the spin injection and detection. The structural and magnetic measurements verify that the Heusler alloy is growing properly. A sizable Hanle signal at room temperature verified the ferromagnetic to semiconductor spin injection. The computed spin-resistance area confirms that the accumulation took place in the semiconductor channel as opposed to the interface states. This heterostructure’s measured spin diffusion length <i>L</i><sub>SD</sub> (249&#xa0;nm) and spin life time <i>τ</i> (168&#xa0;ps) are quite impressive at room temperature, which makes Co<sub>2</sub>TiSi a promising option for upcoming spintronics applications.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Observation of room-temperature robust three-terminal Hanle signal in Co2TiSi/SiO2/n-Si Heterostructure

  • 期刊论文

  • 发表日期：

    2025年4月23日

查看全文
  • Sajib Biswas,
  • Niladri Sekhar Kander,
  • Safikul Islam,
  • Amal Kumar Das

摘要

We have studied the spin injection properties of Co2TiSi (CTS)/SiO2/n-Si heterostructure by measuring the three-terminal (3T) Hanle signal. We used n-type silicon as the semiconductor and Co2TiSi Heusler alloy as the electrode to create a standard three-terminal Hanle device for measuring the spin injection and detection. The structural and magnetic measurements verify that the Heusler alloy is growing properly. A sizable Hanle signal at room temperature verified the ferromagnetic to semiconductor spin injection. The computed spin-resistance area confirms that the accumulation took place in the semiconductor channel as opposed to the interface states. This heterostructure’s measured spin diffusion length LSD (249 nm) and spin life time τ (168 ps) are quite impressive at room temperature, which makes Co2TiSi a promising option for upcoming spintronics applications.