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<p>The development of efficient host materials is crucial for improving the performance of thermally activated delayed fluorescence organic light-emitting diode. In this study, two U-shaped molecules (15CzCN, 24CzCN) and one rod-shaped molecule (14CzCN) were successfully designed and synthesized by tuning the connection sites of donor units. All three materials exhibited excellent thermal stability (T<sub>d</sub> &gt; 400&#xa0;°C) and high triplet energy (E<sub>T</sub> &gt; 2.80&#xa0;eV), demonstrating potential as host materials for green light emission. Furthermore, their photophysical properties were systematically investigated, with photoluminescence quantum yields (PLQYs) of 61.1 and 76.4% observed for 15CzCN and 24CzCN doped with 10% 4CzIPN, respectively, exceeding the 58.1% of 14CzCN. In device performance tests, the solution-processed device with 10% 4CzIPN as the dopant and 24CzCN as the host achieved a maximum external quantum efficiency (EQE<sub>max</sub>) of 10.09%. This work offers new insights into the design and development of host materials for future applications.</p>

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U-shaped configuration design of host materials for solution-processed organic light-emitting diodes

  • 期刊论文

  • 发表日期：

    2025年4月16日

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  • Qiyin Ran,
  • Xinjian Wang,
  • Guimin Zhao,
  • Yuheng Lou,
  • Renjie Ji,
  • Shuai Lv,
  • Wenwen Tian,
  • Wei Jiang,
  • Yueming Sun

摘要

The development of efficient host materials is crucial for improving the performance of thermally activated delayed fluorescence organic light-emitting diode. In this study, two U-shaped molecules (15CzCN, 24CzCN) and one rod-shaped molecule (14CzCN) were successfully designed and synthesized by tuning the connection sites of donor units. All three materials exhibited excellent thermal stability (Td > 400 °C) and high triplet energy (ET > 2.80 eV), demonstrating potential as host materials for green light emission. Furthermore, their photophysical properties were systematically investigated, with photoluminescence quantum yields (PLQYs) of 61.1 and 76.4% observed for 15CzCN and 24CzCN doped with 10% 4CzIPN, respectively, exceeding the 58.1% of 14CzCN. In device performance tests, the solution-processed device with 10% 4CzIPN as the dopant and 24CzCN as the host achieved a maximum external quantum efficiency (EQEmax) of 10.09%. This work offers new insights into the design and development of host materials for future applications.