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<p>The effect of a dc-bias voltage is understood in the admittance (<i>Y</i>) and conductivity (<i>σ</i>) mechanisms (40–10<sup>6</sup>&#xa0;Hz) of fused synthesized, niobium-doped lanthanum barium titanate (Ba<sub>0.97</sub>La<sub>0.02</sub>Ti<sub>1−<i>x</i></sub>Nb<sub>4<i>x</i>/5</sub>O<sub>3</sub>, for <i>x</i> = 0.00, 0.02, 0.05, and 0.07) nanoparticles. XRD-Rietveld analysis is used to examine phase transformation and stoichiometry properties. The tetragonal phase structure with P4/mmm space group was justified by the Rietveld refinement of the XRD pattern. The XRD pattern revealed crystallite sizes ranging from 102 to 78.99&#xa0;nm. The relatively low band gap energy, ranging between 3.31 and 3.37&#xa0;eV, implies that semiconductor specimens can be used in visible-range photon harvesting systems. The real/imaginary parts of admittance are useful for diagnosing conduction processes and related to the accumulation of charge carriers near the electrode. CBH and NSPT are investigated using Jonscher's power law (JPL) to highlight variable-range and correlated barrier hopping processes, which include delocalized or de-trapped carriers.</p>

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Manipulating of bias-dependent frequency-dispersions of admittance and ac–dc conductivity mechanisms in Ba0.97La0.02Ti1−xNb4x/5O3 polycrystalline elaborated via fused method

  • 期刊论文

  • 发表日期：

    2025年5月1日

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  • Marwa Jebli,
  • Khaled Kharrati,
  • J. Dhahri,
  • Nejeh Hamdaoui,
  • Nouf Ahmed Althumairi,
  • Hafedh Belmabrouk

摘要

The effect of a dc-bias voltage is understood in the admittance (Y) and conductivity (σ) mechanisms (40–106 Hz) of fused synthesized, niobium-doped lanthanum barium titanate (Ba0.97La0.02Ti1−xNb4x/5O3, for x = 0.00, 0.02, 0.05, and 0.07) nanoparticles. XRD-Rietveld analysis is used to examine phase transformation and stoichiometry properties. The tetragonal phase structure with P4/mmm space group was justified by the Rietveld refinement of the XRD pattern. The XRD pattern revealed crystallite sizes ranging from 102 to 78.99 nm. The relatively low band gap energy, ranging between 3.31 and 3.37 eV, implies that semiconductor specimens can be used in visible-range photon harvesting systems. The real/imaginary parts of admittance are useful for diagnosing conduction processes and related to the accumulation of charge carriers near the electrode. CBH and NSPT are investigated using Jonscher's power law (JPL) to highlight variable-range and correlated barrier hopping processes, which include delocalized or de-trapped carriers.