<p>The films of Bi_{4 − <i>x</i>}Eu_<i>x</i>Ti₃O₁₂ (<i>x</i> = 0, 0.1, 0.2, 0.3, and 0.4) were prepared on substrates (Pt(111)/Ti/SiO₂/Si(100)) via the sol-gel method due to low cost and non-vacuum preparation conditions. The results show that, when annealed at 700&#xa0;°C, the films of Bi_{4 − <i>x</i>}Eu_<i>x</i>Ti₃O₁₂ are composed of Bi₄Ti₃O₁₂ and Pt from the substrates without impurity phases, which suggests that Eu³⁺ has been successfully dissolved into the lattice of Bi₄Ti₃O₁₂. The interface between the film and the substrate is clear and smooth. Compared with the film of Bi₄Ti₃O₁₂, the films of Bi_{4 − <i>x</i>}Eu_<i>x</i>Ti₃O₁₂ possess better ferroelectric property. With increasing doping concentration of Eu³⁺, the values of the remnant polarization increase first and then decrease. When the doping concentration of Eu³⁺ is 0.3, the value of remnant polarization reaches maximum, 17.7 μC cm⁻². The films of Bi_{4 − <i>x</i>}Eu_<i>x</i>Ti₃O₁₂ exhibit an orange-light emission peak at 591&#xa0;nm and a red-light emission peak at 615&#xa0;nm. Among the films of Bi_{4 − <i>x</i>}Eu_<i>x</i>Ti₃O₁₂ (<i>x</i> = 0, 0.1, 0.2, 0.3, 0.4), the Bi_3.7Eu_0.3Ti₃O₁₂ films exhibit the best ferroelectricity and fluorescence. The enhancement of both ferroelectricity and fluorescence implies that Eu³⁺ doped Bi₄Ti₃O₁₂ films exhibit potential applications in multi-functional devices.</p>