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<p>The barium ferrites (BaFeO<sub>12</sub>) thin films with barium ions of over stoichiometry ratio of Ba/Fe = x/12 (x = 1.0–3.0) in sol precursor were successfully prepared on silicon substrates by sol–gel and spin-coating method. Results show that the rod-like ferrite grains of 100 ~ 200&#xa0;nm in size were formed densely in the thin film. The (00<i>&#xa0;l</i>) orientation of the ferrite phase was controlled to form in the thin film. Excess Ba<sup>2+</sup> existed in cell lattice and doped in the interstitial sites of triangular biconical or octahedral interstices. Fe<sup>2+</sup>/Fe<sup>3+</sup> electron pair dipoles were generated by doping Ba<sup>2+</sup>, increasing initially and decreasing finally. The highest content of Fe<sup>2+</sup>/Fe<sup>3+</sup> dipoles appeared in the 4-layered thin film prepared with over stoichiometry ratio of Ba:Fe = 2:12 in sol precursor, contributing a highest dielectric tunability of 69%, low dielectric loss of 0.03 and FOM of 21.6 at 10&#xa0;kHz under super low DC bias of ~ 200&#xa0;V/cm. Such high tunability and low loss under super low electric field in the barium ferrite thin films show great potential for novel applications in dielectric tunable devices.</p>

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Interstitial Ba2+ ions doped (00 l) oriented barium ferrite thin film with high dielectric tunability under ultra-low bias for microwave applications

  • 期刊论文

  • 发表日期：

    2025年4月6日

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  • Xiaoting Li,
  • Shuang Lv,
  • Zhengguan Dai,
  • Yuzheng He,
  • Zongrong Wang,
  • Ning Ma,
  • Piyi Du

摘要

The barium ferrites (BaFeO12) thin films with barium ions of over stoichiometry ratio of Ba/Fe = x/12 (x = 1.0–3.0) in sol precursor were successfully prepared on silicon substrates by sol–gel and spin-coating method. Results show that the rod-like ferrite grains of 100 ~ 200 nm in size were formed densely in the thin film. The (00 l) orientation of the ferrite phase was controlled to form in the thin film. Excess Ba2+ existed in cell lattice and doped in the interstitial sites of triangular biconical or octahedral interstices. Fe2+/Fe3+ electron pair dipoles were generated by doping Ba2+, increasing initially and decreasing finally. The highest content of Fe2+/Fe3+ dipoles appeared in the 4-layered thin film prepared with over stoichiometry ratio of Ba:Fe = 2:12 in sol precursor, contributing a highest dielectric tunability of 69%, low dielectric loss of 0.03 and FOM of 21.6 at 10 kHz under super low DC bias of ~ 200 V/cm. Such high tunability and low loss under super low electric field in the barium ferrite thin films show great potential for novel applications in dielectric tunable devices.