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<p>The development of mobile communication technology urgently needs microwave dielectric ceramic materials with high-temperature stability. Herein, LaAl<sub>1-<i>x</i></sub>Ti<sub><i>x</i></sub>O<sub>3</sub> (LATO, <i>x</i> = 0–0.4) ceramic samples were synthesized by solid-state reaction method. Subsequently, the microstructure of the ceramics was studied and their microwave dielectric properties were measured. The experimental results show that after sintering at 1525&#xa0;℃ for 4 h, the optimum microwave dielectric properties are obtained at <i>x</i> = 0.2, <i>ε</i><sub><i>r</i></sub> = 14.93, <i>Q</i> × <i>f</i> = 8484 GHz, and <i>τ</i><sub><i>f</i></sub> = -6.99 ppm/℃. As the value of <i>x</i> increases, the values of <i>ε</i><sub><i>r</i></sub> and <i>Q</i> × <i>f</i> first increase and then decrease, which is attributed to changes in the stability of the material structure and adjustments in the symmetric tensile mode of the Al/Ti–O bond. It is worth noting that the addition of Ti<sup>4+</sup> effectively improved the resonant frequency temperature coefficient of the material. It is predicted that the addition of Ti<sup>4+</sup> can adjust the inclination of oxygen octahedra and promote the orientation of <i>τ</i><sub><i>f</i></sub> toward 0. This work confirms the significant potential of LATO (<i>x</i> = 0–0.4) ceramics in enhancing the temperature stability of microwave devices.</p>

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Effect of Ti-doped LaAlO3 on microwave dielectric properties

  • 期刊论文

  • 发表日期：

    2025年3月23日

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  • Mian Jiang,
  • Xinguo Ma,
  • Chuyun Huang,
  • Hua He,
  • Zhengjie Zhang,
  • Zhiwen Liu,
  • Nan Ma

摘要

The development of mobile communication technology urgently needs microwave dielectric ceramic materials with high-temperature stability. Herein, LaAl1-xTixO3 (LATO, x = 0–0.4) ceramic samples were synthesized by solid-state reaction method. Subsequently, the microstructure of the ceramics was studied and their microwave dielectric properties were measured. The experimental results show that after sintering at 1525 ℃ for 4 h, the optimum microwave dielectric properties are obtained at x = 0.2, εr = 14.93, Q × f = 8484 GHz, and τf = -6.99 ppm/℃. As the value of x increases, the values of εr and Q × f first increase and then decrease, which is attributed to changes in the stability of the material structure and adjustments in the symmetric tensile mode of the Al/Ti–O bond. It is worth noting that the addition of Ti4+ effectively improved the resonant frequency temperature coefficient of the material. It is predicted that the addition of Ti4+ can adjust the inclination of oxygen octahedra and promote the orientation of τf toward 0. This work confirms the significant potential of LATO (x = 0–0.4) ceramics in enhancing the temperature stability of microwave devices.