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<p>In this article, Au/n-Si metal/(organic/polymer)/semiconductor (MPS) devices with (MWCNT-doped PVA-B(OH)<sub>3</sub>) interlayer grown by spin-coating were prepared, electrical/optical characteristics of them have been extracted from the I–V characteristics as function of illumination (dark-100&#xa0;mW/cm<sup>2</sup>) and time (0–200&#xa0;s). The values of quality factor (<i>n</i>), reverse saturation-current (I<sub>0</sub>), potential-barrier height (BH/<i>Ф</i><sub>B0</sub>), series/shun resistances (<i>R</i><sub>s</sub>, <i>R</i><sub>sh</sub>), and rectification/ratio (RR) have been obtained from the I–V characteristics by utilizing thermionic emission (TE) mechanism, Cheung functions, and Norde method for all illumination intensities (<i>P</i>). The energy dependence profiles of interface states (<i>N</i><sub>ss</sub>) in dark and under 100&#xa0;mW/cm<sup>2</sup> illumination intensity was also calculated by using the I–V data at positive bias region by considering voltage dependence of BH and <i>n</i>, and they change at about between 1.7 × 10<sup>14</sup>&#xa0;eV<sup>−1</sup>&#xa0;cm<sup>−2</sup> at 0.70&#xa0;eV and 4 × 10<sup>14</sup>&#xa0;eV<sup>−1</sup>&#xa0;cm<sup>−2</sup> at 0.45&#xa0;eV. According to the I–t–P measurements, the photocurrent (<i>I</i><sub>ph</sub>) increases with increasing <i>P</i>, and sample was found strong function of illumination and exhibited photo-sensing properties. The slopes of the log(<i>I</i><sub>ph</sub>)−log(<i>P</i>) plots were found to be between 0.25 and 0.70, indicating a linear photoconductive behavior. Furthermore, the photosensitivity (<i>S</i>), photo-responsivity (<i>R</i>), and specific-detectivity (<i>D</i><sup>*</sup>) of the sample for various light intensities were investigated. All experimental results show that the fabricated diodes are considerably dependent on voltage and illumination intensity.</p>

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On an investigation of optoelectrical features in Au/(MWCNT:PVA-B(OH)3)/n-Si structure, using I–V data, in dark and illumination conditions

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  • 发表日期：

    2025年3月22日

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  • Dilan Ata,
  • Şemsettin Altındal,
  • Muzaffer Balbaşı

摘要

In this article, Au/n-Si metal/(organic/polymer)/semiconductor (MPS) devices with (MWCNT-doped PVA-B(OH)3) interlayer grown by spin-coating were prepared, electrical/optical characteristics of them have been extracted from the I–V characteristics as function of illumination (dark-100 mW/cm2) and time (0–200 s). The values of quality factor (n), reverse saturation-current (I0), potential-barrier height (BH/ФB0), series/shun resistances (Rs, Rsh), and rectification/ratio (RR) have been obtained from the I–V characteristics by utilizing thermionic emission (TE) mechanism, Cheung functions, and Norde method for all illumination intensities (P). The energy dependence profiles of interface states (Nss) in dark and under 100 mW/cm2 illumination intensity was also calculated by using the I–V data at positive bias region by considering voltage dependence of BH and n, and they change at about between 1.7 × 1014 eV−1 cm−2 at 0.70 eV and 4 × 1014 eV−1 cm−2 at 0.45 eV. According to the I–t–P measurements, the photocurrent (Iph) increases with increasing P, and sample was found strong function of illumination and exhibited photo-sensing properties. The slopes of the log(Iph)−log(P) plots were found to be between 0.25 and 0.70, indicating a linear photoconductive behavior. Furthermore, the photosensitivity (S), photo-responsivity (R), and specific-detectivity (D*) of the sample for various light intensities were investigated. All experimental results show that the fabricated diodes are considerably dependent on voltage and illumination intensity.