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<p>Cd<sub>3</sub>As<sub>2</sub> thin films were synthesized from single crystals by vacuum-thermal sputtering. The calculation of the growth rate based on the thermodynamic properties of Cd<sub>3</sub>As<sub>2</sub> made it possible to determine the technological conditions for the synthesis of films with a different thickness. Thin films of Cd<sub>3</sub>As<sub>2</sub> were obtained at substrate temperatures of 25&#xa0;°C–175&#xa0;°C and it was shown that with increasing substrate temperature, the crystallite size, conductivity, and magnetoresistance in the films increase. The linear character of the resistance in range of the magnetic field 0–0.1&#xa0;T is of practical interest when using Cd<sub>3</sub>As<sub>2</sub> films as magnetic sensors.</p>

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Effect of the synthesis conditions on the composition, structure, and electromagnetic properties of Cd3As2 thin films

  • 期刊论文

  • 发表日期：

    2025年4月1日

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  • Yu. B. Nechushkin,
  • A. I. Ril’,
  • M. D. Pavlyuk,
  • A. V. Kochura,
  • A. V. Timofeev,
  • S. F. Marenkin

摘要

Cd3As2 thin films were synthesized from single crystals by vacuum-thermal sputtering. The calculation of the growth rate based on the thermodynamic properties of Cd3As2 made it possible to determine the technological conditions for the synthesis of films with a different thickness. Thin films of Cd3As2 were obtained at substrate temperatures of 25 °C–175 °C and it was shown that with increasing substrate temperature, the crystallite size, conductivity, and magnetoresistance in the films increase. The linear character of the resistance in range of the magnetic field 0–0.1 T is of practical interest when using Cd3As2 films as magnetic sensors.