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<p>Chalcogenide semiconductors that contain S, Se and Te as their main components exhibit characteristic properties that stem from the electronic structure of the chalcogen atoms. In particular, they have recently attracted attention as materials for thermoelectric devices, phase-change memories, and electrical switches. In this study, we focused on Sn–Se as a binary chalcogenide, and fabricated thin films and evaluated their electronic properties. The band gap of the&#xa0;Sn–Se films prepared by vacuum deposition was ~ 1.10&#xa0;eV. The electrical resistivity showed a thermal activation type, and a decrease in resistivity of more than two orders of magnitude was observed by heat treatment at 300&#xa0;°C. Subgap optical absorption was measured by photothermal deflection spectroscopy, and four types of in-gap states were found. Based on these experimental results, a band model including localized states is discussed.</p>

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Electronic structure of Sn–Se thin films characterized by photothermal deflection spectroscopy

  • 期刊论文

  • 发表日期：

    2025年2月21日

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  • Aoi Iida,
  • Tamihiro Gotoh

摘要

Chalcogenide semiconductors that contain S, Se and Te as their main components exhibit characteristic properties that stem from the electronic structure of the chalcogen atoms. In particular, they have recently attracted attention as materials for thermoelectric devices, phase-change memories, and electrical switches. In this study, we focused on Sn–Se as a binary chalcogenide, and fabricated thin films and evaluated their electronic properties. The band gap of the Sn–Se films prepared by vacuum deposition was ~ 1.10 eV. The electrical resistivity showed a thermal activation type, and a decrease in resistivity of more than two orders of magnitude was observed by heat treatment at 300 °C. Subgap optical absorption was measured by photothermal deflection spectroscopy, and four types of in-gap states were found. Based on these experimental results, a band model including localized states is discussed.