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<p>This article presents a successful fabrication method for hemispheric SiGe nanocrystal-based Mie resonators on photoactive silicon nanodisks on an insulator, achieved through an innovative and scalable approach. This method combines solid-state dewetting of an ultra-thin silicon-on-insulator film (UT-SOI) with germanium growth via molecular beam epitaxy (MBE). The results demonstrate the formation of Mie resonators on silicon nanodisks with precisely defined hemispherical shapes and a homogeneous distribution of germanium in the SiGe core. Three-dimensional finite-difference time-domain (3D FDTD) simulations of the optical properties of SiGe/Si Mie resonators emphasize their capability to generate very high optical loss. This discovery sets the stage for designing compact and high-performance photodetectors with efficient photoactive silicon nanodisks. Moreover, post-integration electrical characterization of these Mie resonators in a MIS-type photodetector reveals their ability to induce a photovoltaic effect while preserving fundamental electrical characteristics. These findings represent a significant advancement in both the fabrication and integration of SiGe-based Mie resonators into optoelectronic devices, opening new avenues in the realms of integrated photonics and advanced optoelectronic technologies.</p>

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SiGe Mie resonators grown on photoactive silicon nanodisks for high-performance photodetection

  • 期刊论文

  • 发表日期：

    2025年2月27日

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  • Mansour Aouassa,
  • Mohammed Bouabdellaoui,
  • Walter Batista Pessoa,
  • Andrei Tsarev,
  • Mohammed Ibrahim,
  • A. K. Aladim,
  • K. M. A. Saron,
  • Isabelle Berbezier

摘要

This article presents a successful fabrication method for hemispheric SiGe nanocrystal-based Mie resonators on photoactive silicon nanodisks on an insulator, achieved through an innovative and scalable approach. This method combines solid-state dewetting of an ultra-thin silicon-on-insulator film (UT-SOI) with germanium growth via molecular beam epitaxy (MBE). The results demonstrate the formation of Mie resonators on silicon nanodisks with precisely defined hemispherical shapes and a homogeneous distribution of germanium in the SiGe core. Three-dimensional finite-difference time-domain (3D FDTD) simulations of the optical properties of SiGe/Si Mie resonators emphasize their capability to generate very high optical loss. This discovery sets the stage for designing compact and high-performance photodetectors with efficient photoactive silicon nanodisks. Moreover, post-integration electrical characterization of these Mie resonators in a MIS-type photodetector reveals their ability to induce a photovoltaic effect while preserving fundamental electrical characteristics. These findings represent a significant advancement in both the fabrication and integration of SiGe-based Mie resonators into optoelectronic devices, opening new avenues in the realms of integrated photonics and advanced optoelectronic technologies.