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<p>Silicides are crucial for reducing contact resistance in microelectronics, and controlling their formation and stability remains a key challenge for improving device performance. This study investigates the structural and electrical properties of nickel silicides in the Ni/Mo/Ni/Si thin-film system, focusing on the role of a molybdenum (Mo) interlayer as a diffusion barrier. Samples were prepared via cathodic sputtering and characterized using X-ray diffraction, Raman spectroscopy, and four-point resistivity measurements. The results reveal that the Mo interlayer delays the formation of NiSi to 400&#xa0;°C and limits its agglomeration, ensuring phase stability up to 600&#xa0;°C. The complete transformation to NiSi₂ occurs only at 800&#xa0;°C, highlighting the interlayer’s effectiveness in suppressing undesired phase transitions. Furthermore, the Mo interlayer reduces electrical resistivity by extending the stability of the low-resistivity NiSi phase. These findings offer valuable insights for optimizing silicide properties and thermal stability in microelectronic applications, paving the way for more efficient and reliable devices.</p>

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Formation and properties of nickel silicides in the Ni/Mo/Ni/Si(100) thin-film system

  • 期刊论文

  • 发表日期：

    2025年2月12日

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  • Imad Messai,
  • El-oualid Bounab

摘要

Silicides are crucial for reducing contact resistance in microelectronics, and controlling their formation and stability remains a key challenge for improving device performance. This study investigates the structural and electrical properties of nickel silicides in the Ni/Mo/Ni/Si thin-film system, focusing on the role of a molybdenum (Mo) interlayer as a diffusion barrier. Samples were prepared via cathodic sputtering and characterized using X-ray diffraction, Raman spectroscopy, and four-point resistivity measurements. The results reveal that the Mo interlayer delays the formation of NiSi to 400 °C and limits its agglomeration, ensuring phase stability up to 600 °C. The complete transformation to NiSi₂ occurs only at 800 °C, highlighting the interlayer’s effectiveness in suppressing undesired phase transitions. Furthermore, the Mo interlayer reduces electrical resistivity by extending the stability of the low-resistivity NiSi phase. These findings offer valuable insights for optimizing silicide properties and thermal stability in microelectronic applications, paving the way for more efficient and reliable devices.