Comparison of electrical properties of pure and copper-doped diamond-like carbon interfacial-layered Schottky devices under different temperature conditions
摘要
In this study, some electrical parameters of the pure and copper-doped diamond-like carbon (DLC) interfacial-layered Schottky devices have been investigated under different temperature conditions. Thus, it was aimed to determine the effects of copper doping on the electrical properties of the devices. Experimental results showed that although different behaviors were observed in both devices in some specific temperature regions, the series resistance values in the copper-doped device gave more stable results depending on the temperature and voltage changes. On the other hand, while the surface states in the DLC interlayered device varied between 1013 and 1014 eV−1 cm−2 levels, lower values (1012–1013 eV−1 cm−2 levels) were observed in the copper-doped device. Moreover, voltage-dependent ideality factor and barrier height exhibited classical behavior as in the literature. However, the copper-doped device still exhibited more stable behaviors. As a result, it has been understood that the electrical properties of the copper-doped device give more regular/stable and higher-quality results.