Enhancement of silicon nitride layer performance by Gallium–Copper–Zinc tri-layer thin films structure via plasma featured chemical vapour deposition route
摘要
Silicon nitride (Si3N4) is a crucial ceramic material in the electronics industry due to its exceptional mechanical, thermal, and dielectric properties. These characteristics make it an ideal choice for microelectronic devices and semiconductor fabrication, presenting significant opportunities for innovation. This research investigates the effects of Gallium-Copper-Zinc (Ga–Cu–Zn) doping on the functional characteristics of Si3N4 layers produced through the Plasma-Enhanced Chemical Vapor Deposition (PECVD) method. The study examines coating thicknesses of 0, 10, 20, and 30 nm. The doping process incorporates Ga, Cu, and Zn elements into the Si3N4 layer, leading to substantial changes in its electrical and optical properties. Experimental results indicate that the Si3N4 layer with a 30 nm Ga–Cu–Zn coating significantly enhances conductivity, reduces the band gap to 1.741 eV, and improves light absorption capacity and current density to 1.55 × 10–4 mA/cm2. The elemental composition was analyzed using scanning electron microscopy (SEM), while the crystalline structure and phase composition were examined through X-ray diffraction (XRD). Based on the findings from this study, the tri-layer of Ga–Cu–Zn with a thickness of 30 nm achieves a transmittance of approximately 90% at a wavelength of 750 nm, along with a high absorption coefficient of 9.2 × 106 cm−1 and an optimal quantum efficiency of 86%.