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<p>Polycrystalline silicon (p-Si) is essential for semiconductor and photovoltaic industries due to its cost-effectiveness, efficiency in solar cells, and versatile applications in electronics. This research investigation synthesized and evaluated the functional characteristics of polycrystalline silicon (p-Si) layer featuring varied thicknesses of silicon nitride (SiNx) coating via plasma enhanced chemical vapour deposition (PECVD). This study explores how SiNx texturing layers with various thicknesses affect the optical and electronic properties of the underlying p-Si substrate. It confirms that SiNx passivation layers are crucial in improving the efficiency of p-Si-based devices by reducing surface recombination velocities, improving solar efficiency, and enhancing light trapping. The effect of SiNx coating thickness on the structural, optical, and electrical behaviour of p-Si is studied. The p-Si featured with 30&#xa0;nm is good transmittance (65%), improved band gap (1.55&#xa0;eV), better I-V performance, optimum absorption current (1.6 X 10<sup>–4</sup>&#xa0;mA/cm<sup>2</sup>), and improved quantum efficiency (86%), which is suitable making solar cell applications.</p>

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Texturing of silicon nitride passivation layers on functional behaviour study of polycrystalline silicon (p-Si) made with plasma enhanced chemical vapour deposition

  • 期刊论文

  • 发表日期：

    2024年12月31日

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  • Venkatesh Rathinavelu,
  • Viyat Varun Upadhyay,
  • S. Prabagaran,
  • S. Govindarajan,
  • Apurv Verma,
  • Manzoore Elahi M. Soudagar,
  • Mohanavel Vinayagam,
  • Majed A. Alotaibi,
  • Asiful H. Seikh

摘要

Polycrystalline silicon (p-Si) is essential for semiconductor and photovoltaic industries due to its cost-effectiveness, efficiency in solar cells, and versatile applications in electronics. This research investigation synthesized and evaluated the functional characteristics of polycrystalline silicon (p-Si) layer featuring varied thicknesses of silicon nitride (SiNx) coating via plasma enhanced chemical vapour deposition (PECVD). This study explores how SiNx texturing layers with various thicknesses affect the optical and electronic properties of the underlying p-Si substrate. It confirms that SiNx passivation layers are crucial in improving the efficiency of p-Si-based devices by reducing surface recombination velocities, improving solar efficiency, and enhancing light trapping. The effect of SiNx coating thickness on the structural, optical, and electrical behaviour of p-Si is studied. The p-Si featured with 30 nm is good transmittance (65%), improved band gap (1.55 eV), better I-V performance, optimum absorption current (1.6 X 10–4 mA/cm2), and improved quantum efficiency (86%), which is suitable making solar cell applications.