<p>A novel BaMgSi<sub>4</sub>O<sub>10</sub> ceramic was fabricated using a conventional solid-state method. The BaMgSi<sub>4</sub>O<sub>10</sub> accompanied with BaMgSiO<sub>5</sub>, Ba<sub>2</sub>MgSi<sub>2</sub>O<sub>7</sub>, and SiO<sub>2</sub> was detected for all compositions. Furthermore, microwave dielectric properties with <i>ε</i><sub>r</sub> = 5.7<sub>,</sub> <i>Q</i> × <i>f</i> = 17,900&#xa0;GHz, and <i>τ</i><sub><i>f</i></sub> = − 19.1&#xa0;ppm/°C were obtained at 1100&#xa0;°C. To meet the requirement of LTCC technology, the optimum temperature can be lower than 850&#xa0;°C by composing with 2 wt% LMS glass with a short soaking time of 0.5&#xa0;h. A patch antenna was fabricated using BaMgSi<sub>4</sub>O<sub>10</sub>-2&#xa0;wt% LMS as the substrate with a bandwidth of 120&#xa0;MHz at 4.12&#xa0;GHz. All result indicates BaMgSi<sub>4</sub>O<sub>10</sub>-2 wt% LMS ceramic has large application prospect in wireless communication systems.</p>

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A novel BaMgSi4O10 microwave dielectric ceramic for LTCC application

  • Zhenli Luo,
  • Yiyang Cai,
  • Changzhi Yin,
  • Mingfei Cheng,
  • Weicheng Lei,
  • Wenzhong Lu,
  • Xiaoqiang Song,
  • Wen Lei

摘要

A novel BaMgSi4O10 ceramic was fabricated using a conventional solid-state method. The BaMgSi4O10 accompanied with BaMgSiO5, Ba2MgSi2O7, and SiO2 was detected for all compositions. Furthermore, microwave dielectric properties with εr = 5.7, Q × f = 17,900 GHz, and τf = − 19.1 ppm/°C were obtained at 1100 °C. To meet the requirement of LTCC technology, the optimum temperature can be lower than 850 °C by composing with 2 wt% LMS glass with a short soaking time of 0.5 h. A patch antenna was fabricated using BaMgSi4O10-2 wt% LMS as the substrate with a bandwidth of 120 MHz at 4.12 GHz. All result indicates BaMgSi4O10-2 wt% LMS ceramic has large application prospect in wireless communication systems.