<p>The explosive growth of artificial intelligence (AI) servers and high-performance computing (HPC) is driving&#xa0;an urgent demand for ultra-thin base-metal-electrode multilayer ceramic capacitors (BME-MLCCs) with superior reliability under high electric fields and elevated temperatures. Here, 150 nm BaTiO<sub>3</sub> nanopowders were doped with high Dy concentrations (1.5–3.0&#xa0;mol%) via chemical coating and reducing-atmosphere sintering, yielding nanoceramics with uniform grain sizes (~ 210–220&#xa0;nm) and well-defined core–shell microstructures featuring progressively higher Dy concentrations in the shell. The effects of Dy doping on the microstructure, dielectric properties, and reliability of these materials were studied. Increasing Dy content markedly improved temperature stability (satisfying EIA X7R) and DC-bias performance, reducing capacitance variation at 4 kV/mm from −42.9 to −15.5%. Highly accelerated lifetime testing (HALT) at 260 °C and 1.2 kV/mm showed a more than four-time increase in time-to-failure (22&#xa0;h to &gt; 100&#xa0;h). High-temperature impedance spectroscopy and thermally stimulated depolarization current (TSDC) measurements revealed that Dy doping raised the oxygen-vacancy migration activation energy from 1.07 to 1.21 eV while lowering vacancy concentration and mobility. Phase-field simulations confirmed that the heavily doped shell forms a robust microstructural barrier, producing tortuous breakdown paths and substantially higher breakdown strength. These enhancements, arising from amphoteric Dy<sup>3+</sup> defect complexes that pin oxygen vacancies together with the nanocrystalline “shell-barrier” effect, provide a clear strategy for next-generation high-reliability ultra-thin BME-MLCC dielectrics tailored for demanding AI and HPC applications.</p>

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Reliability enhancement in Dy-doped BaTiO3 nanoceramics: from core–shell structure to phase-field modeling

  • Shuyan Huang,
  • Xinjie Wang,
  • Mengjian Xiao,
  • Xu Cheng,
  • Xiaohui Wang

摘要

The explosive growth of artificial intelligence (AI) servers and high-performance computing (HPC) is driving an urgent demand for ultra-thin base-metal-electrode multilayer ceramic capacitors (BME-MLCCs) with superior reliability under high electric fields and elevated temperatures. Here, 150 nm BaTiO3 nanopowders were doped with high Dy concentrations (1.5–3.0 mol%) via chemical coating and reducing-atmosphere sintering, yielding nanoceramics with uniform grain sizes (~ 210–220 nm) and well-defined core–shell microstructures featuring progressively higher Dy concentrations in the shell. The effects of Dy doping on the microstructure, dielectric properties, and reliability of these materials were studied. Increasing Dy content markedly improved temperature stability (satisfying EIA X7R) and DC-bias performance, reducing capacitance variation at 4 kV/mm from −42.9 to −15.5%. Highly accelerated lifetime testing (HALT) at 260 °C and 1.2 kV/mm showed a more than four-time increase in time-to-failure (22 h to > 100 h). High-temperature impedance spectroscopy and thermally stimulated depolarization current (TSDC) measurements revealed that Dy doping raised the oxygen-vacancy migration activation energy from 1.07 to 1.21 eV while lowering vacancy concentration and mobility. Phase-field simulations confirmed that the heavily doped shell forms a robust microstructural barrier, producing tortuous breakdown paths and substantially higher breakdown strength. These enhancements, arising from amphoteric Dy3+ defect complexes that pin oxygen vacancies together with the nanocrystalline “shell-barrier” effect, provide a clear strategy for next-generation high-reliability ultra-thin BME-MLCC dielectrics tailored for demanding AI and HPC applications.