This study investigates the potential of \(\text {Ag}_2\text {GeX}_3\) ( \(\text {X}=\text {S}, \text {Se}\) ) chalcogenides as attractive photo-ferroelectric materials for visible-light energy conversion. Using first-principles density functional theory (DFT) calculations, we reveal that these compounds exhibit a robust ferroelectricity-driven bulk photovoltaic effect (BPVE), eliminating the need for external electric fields—an inherent limitation in conventional ferroelectric oxides. The \(\text {Ag}_2\text {GeX}_3\) materials possess bandgaps ranging from 0.97 to \(1.90\text { eV}\) , aligning well with the visible spectrum and supporting effective light harvesting. \(\text {Ag}_2\text {GeS}_3\) displays higher spontaneous polarization than \(\text {Ag}_2\text {GeSe}_3\) , facilitating efficient charge separation, while their non-centrosymmetric crystal symmetry enables strong shift current generation via the Berry connection mechanism. Notably, orthorhombic \(\text {Ag}_2\text {GeSe}_3\) exhibits a peak shift current conductivity of \(131~\mu \text {A/V}^{2}\) within the visible range, comparable to the best known BPVE materials. These results highlight the remarkable interplay between the electronic, optical, and ferroelectric properties in \(\text {Ag}_2\text {GeX}_3\) compounds, positioning them as viable candidates for next-generation solar energy applications. Their ability to surpass traditional efficiency limits via the intrinsic BPVE mechanism offers a compelling pathway toward high-performance, sustainable photovoltaic technologies.
