Scholarlink

<p>This study investigated the effects of different interconnect metals on the electrical performance and reliability of flexible low-dielectric constant (low-<i>k</i>) SiCOH thin films for potential application in flexible electronics. Flexible SiCOH films were fabricated on indium tin oxide-coated polyethylene naphthalate (ITO/PEN) substrates using plasma-enhanced chemical vapor deposition (PECVD) of tetrakis (trimethylsilyloxy)silane (TTMSS) as the organosilicate precursor. The Fourier transform infrared (FTIR) analysis identified enhanced cross-linking and a reduction in terminal methyl groups with an increase in the deposition plasma power, indicating improved film density. Subsequently, metal–insulator–metal (MIM) capacitors were fabricated using metals of Al, Cu, Co, Mo, and W as the top gate electrodes to evaluate the electrical performance and reliability of SiCOH films. The dielectric constant (<i>k</i>) increased across all metal gate types with an increase in the deposition plasma power. However, the Cu-gate MIM capacitor showed increased leakage current and reduced dielectric strength due to high Cu diffusivity and plasma-induced damage (PID). In contrast, Co-, Mo-, and W-gate MIM capacitors exhibited improved reliability with lower leakage currents and higher breakdown fields. The Co-gate MIM capacitor demonstrated the most favorable trade-off between electrical performance and process compatibility. The findings underscore the potential of alternative interconnect metals, particularly Co, for integration with flexible low-<i>k</i> dielectrics in future flexible microelectronic devices.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Study on structural and electrical properties of flexible low dielectric constant materials integrated with different interconnect metals

  • 期刊论文

  • 发表日期：

    2026年3月14日

查看全文
  • Rajib Chowdhury,
  • Thomas Poche,
  • Seonhee Jang

摘要

This study investigated the effects of different interconnect metals on the electrical performance and reliability of flexible low-dielectric constant (low-k) SiCOH thin films for potential application in flexible electronics. Flexible SiCOH films were fabricated on indium tin oxide-coated polyethylene naphthalate (ITO/PEN) substrates using plasma-enhanced chemical vapor deposition (PECVD) of tetrakis (trimethylsilyloxy)silane (TTMSS) as the organosilicate precursor. The Fourier transform infrared (FTIR) analysis identified enhanced cross-linking and a reduction in terminal methyl groups with an increase in the deposition plasma power, indicating improved film density. Subsequently, metal–insulator–metal (MIM) capacitors were fabricated using metals of Al, Cu, Co, Mo, and W as the top gate electrodes to evaluate the electrical performance and reliability of SiCOH films. The dielectric constant (k) increased across all metal gate types with an increase in the deposition plasma power. However, the Cu-gate MIM capacitor showed increased leakage current and reduced dielectric strength due to high Cu diffusivity and plasma-induced damage (PID). In contrast, Co-, Mo-, and W-gate MIM capacitors exhibited improved reliability with lower leakage currents and higher breakdown fields. The Co-gate MIM capacitor demonstrated the most favorable trade-off between electrical performance and process compatibility. The findings underscore the potential of alternative interconnect metals, particularly Co, for integration with flexible low-k dielectrics in future flexible microelectronic devices.