Interface engineering of perovskite solar cells using n- and t-butylammonium iodide
摘要
This study examines how the molecular structure of passivation agents influences the performance and properties of mixed-halide perovskite solar cells. Linear n-butylammonium iodide (n-BAI) and branched t-butylammonium iodide (t-BAI) were applied as surface modifiers applied to mixed-halide perovskite films. Comprehensive characterization, including X-ray diffraction (XRD), photoluminescence (PL), and photovoltaic measurements, revealed that both treatments maintain the desirable black-phase perovskite and have minimal impact on the optical bandgap (~ 1.55 eV). However, clear differences emerged in emission intensity, morphological smoothness, and overall device performance. Devices incorporating n-BAI exhibited enhanced PL signals, improved surface uniformity, and reduced non-radiative recombination, leading to a peak power conversion efficiency of 23.2%, with open-circuit voltage (Voc) = 1.146 V, and fill factor of 78.5%. The improvement is attributed to more effective passivation at grain boundaries and interfaces. Conversely, the steric bulk of t-BAI appears to hinder uniform coverage, resulting in less efficient defect suppression. These findings underscore the importance of molecular design in optimizing interface treatments for high-efficiency and stable perovskite solar cells.