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<p>To address the inherent trade-off between piezoelectric performance and temperature stability in Pb(Zr,Ti)O<sub>3</sub> (PZT)-based ceramics for ultrasonic transducer in high-temperature applications, a series of (Pb<sub>0.985</sub>Sm<sub>0.01</sub>)(Zn<sub>0.067</sub>Nb<sub>0.133</sub>Zr<sub>0.8−<i>x</i></sub>Ti<sub><i>x</i></sub>)O<sub>3</sub> (PSZNZ<sub>0.8−<i>x</i></sub>T<sub><i>x</i></sub>, <i>x</i> = 0.36, 0.37, 0.375, 0.38, 0.39) piezoelectric ceramics were synthesized via the traditional solid-state reaction method. The influence of the Zr/Ti ratio on the crystal structure, microstructure, electrical properties, and temperature stability of these ceramics was rigorously evaluated. With the increase in Ti content, the dominant crystal structure of PSZNZ<sub>0.8−<i>x</i></sub>T<sub><i>x</i></sub> ceramics changes from the rhombohedral (R) phase to the tetragonal (T) phase, and a morphotropic phase boundary (MPB) is formed in the PSZNZ<sub>0.42</sub>T<sub>0.38</sub> ceramic, which exhibits optimal piezoelectric performance (<i>d</i><sub>33</sub> ~ 630&#xa0;pC/N, <i>k</i><sub><i>p</i></sub> ~ 70.1%, <i>T</i><sub>C</sub> ~ 310&#xa0;°C). Notably, the PSZNZ<sub>0.42</sub>T<sub>0.38</sub> ceramic demonstrates excellent temperature stability within the 20–200&#xa0;°C range: Its remnant polarization (<i>P</i><sub>r</sub>) and positive strain (<i>S</i><sub>pos</sub>) exhibit relative change rates of &lt; 35% and &lt; 25%, respectively, while <i>d</i><sub>33</sub> remains above 600&#xa0;pC/N with a relative change rate of &lt; 15%. The ultrasonic transducer fabricated with the PSZNZ<sub>0.42</sub>T<sub>0.38</sub> ceramic achieves a maximum output voltage of 2.28&#xa0;V, 1.26 times higher than that of its PSZNZ<sub>0.44</sub>T<sub>0.36</sub> counterpart, and a relative voltage change rate of &lt; 10% over 20–200&#xa0;°C. These results demonstrate that the PSZNZ<sub>0.42</sub>T<sub>0.38</sub> ceramic integrates high piezoelectric performance and reliable temperature stability, making it a viable and promising candidate for ultrasonic transducers operating under high-temperature conditions.</p>

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Enhanced temperature stability and electrical performances of PZT-based piezoelectric ceramics for high-temperature ultrasonic transducer application

  • 期刊论文

  • 发表日期：

    2026年3月8日

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  • Xiaofang Zhang,
  • Tongxin Han,
  • Yuanhui Su,
  • Shifeng Huang,
  • Yu Huan

摘要

To address the inherent trade-off between piezoelectric performance and temperature stability in Pb(Zr,Ti)O3 (PZT)-based ceramics for ultrasonic transducer in high-temperature applications, a series of (Pb0.985Sm0.01)(Zn0.067Nb0.133Zr0.8−xTix)O3 (PSZNZ0.8−xTx, x = 0.36, 0.37, 0.375, 0.38, 0.39) piezoelectric ceramics were synthesized via the traditional solid-state reaction method. The influence of the Zr/Ti ratio on the crystal structure, microstructure, electrical properties, and temperature stability of these ceramics was rigorously evaluated. With the increase in Ti content, the dominant crystal structure of PSZNZ0.8−xTx ceramics changes from the rhombohedral (R) phase to the tetragonal (T) phase, and a morphotropic phase boundary (MPB) is formed in the PSZNZ0.42T0.38 ceramic, which exhibits optimal piezoelectric performance (d33 ~ 630 pC/N, kp ~ 70.1%, TC ~ 310 °C). Notably, the PSZNZ0.42T0.38 ceramic demonstrates excellent temperature stability within the 20–200 °C range: Its remnant polarization (Pr) and positive strain (Spos) exhibit relative change rates of < 35% and < 25%, respectively, while d33 remains above 600 pC/N with a relative change rate of < 15%. The ultrasonic transducer fabricated with the PSZNZ0.42T0.38 ceramic achieves a maximum output voltage of 2.28 V, 1.26 times higher than that of its PSZNZ0.44T0.36 counterpart, and a relative voltage change rate of < 10% over 20–200 °C. These results demonstrate that the PSZNZ0.42T0.38 ceramic integrates high piezoelectric performance and reliable temperature stability, making it a viable and promising candidate for ultrasonic transducers operating under high-temperature conditions.