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<p>This work figures out the effect of capping concentration on structural, morphological, optical, and electrochemical properties of Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) quantum dots and inspects its potential as p-type absorber layer for photovoltaic applications. While numerous wet chemical routes for synthesizing CZTS have been reported, the present work focuses on elucidating the critical role of PVP in this process, an aspect that remains insufficiently explored. Three different samples of CZTS quantum dots were synthesized through a facile solvothermal synthesis route, with varying PVP concentrations of 2&#xa0;g, 1&#xa0;g, and 0&#xa0;g, respectively. Detailed analysis of the as-synthesized sample revealed the formation of quantum dots owing to kesterite crystal structure. The information regarding structure, morphology, and composition was inferred from XRD, micro-Raman, FESEM with EDAX, DLS, and HRTEM analysis. The optical properties were evaluated through UV–Vis diffuse reflectance spectrum. Electrochemical techniques, such as cyclic voltammetry and impedance spectroscopy, were utilized to probe the electron transfer properties and band gap of the samples. Thorough analysis from characterization results indicated that the concentration of 1&#xa0;g of PVP can enhance the optical, structural, and electrochemical properties of CZTS nanomaterials. It yielded quantum dots with least agglomeration, and crystallite size falls around 4.6&#xa0;nm. In addition, stoichiometry is apt for 1&#xa0;g concentration of PVP. Also, the band gap values obtained from Kubelka–Munk plot are in well accordance with the cyclic voltammetry results and fall in the required range suited for efficient absorption in solar cell. This material was incorporated to form a heterojunction structure of glass/SnO<sub>2</sub>/F/TiO<sub>2</sub>/Cu<sub>2</sub>ZnSnS<sub>4</sub>/Ag to analyze its device performance.</p>

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PVP-assisted growth inhibition and enhanced functional properties of Cu2ZnSnS4 quantum dots

  • 期刊论文

  • 发表日期：

    2026年3月1日

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  • Cicy Varghese,
  • Julin Joseph,
  • Genifer Silvena George,
  • Bincy John

摘要

This work figures out the effect of capping concentration on structural, morphological, optical, and electrochemical properties of Cu2ZnSnS4 (CZTS) quantum dots and inspects its potential as p-type absorber layer for photovoltaic applications. While numerous wet chemical routes for synthesizing CZTS have been reported, the present work focuses on elucidating the critical role of PVP in this process, an aspect that remains insufficiently explored. Three different samples of CZTS quantum dots were synthesized through a facile solvothermal synthesis route, with varying PVP concentrations of 2 g, 1 g, and 0 g, respectively. Detailed analysis of the as-synthesized sample revealed the formation of quantum dots owing to kesterite crystal structure. The information regarding structure, morphology, and composition was inferred from XRD, micro-Raman, FESEM with EDAX, DLS, and HRTEM analysis. The optical properties were evaluated through UV–Vis diffuse reflectance spectrum. Electrochemical techniques, such as cyclic voltammetry and impedance spectroscopy, were utilized to probe the electron transfer properties and band gap of the samples. Thorough analysis from characterization results indicated that the concentration of 1 g of PVP can enhance the optical, structural, and electrochemical properties of CZTS nanomaterials. It yielded quantum dots with least agglomeration, and crystallite size falls around 4.6 nm. In addition, stoichiometry is apt for 1 g concentration of PVP. Also, the band gap values obtained from Kubelka–Munk plot are in well accordance with the cyclic voltammetry results and fall in the required range suited for efficient absorption in solar cell. This material was incorporated to form a heterojunction structure of glass/SnO2/F/TiO2/Cu2ZnSnS4/Ag to analyze its device performance.