<p>This paper elucidates the anisotropy of the wet etching of single-crystal silicon from an energy perspective through calculation and analysis of activation energies across various crystal planes and exposed atoms. Firstly, the study determines activation energies of various crystal planes based on etching rates under varying temperature conditions using the Arrhenius equation, analyzing the relationship between these activation energies and etching rates. Subsequently, the temperature dependence of the removal probability equation in the Monte Carlo simulation model is modified to enable simulations under various temperature conditions. Finally, the modified removal probability equation facilitates the calculation of removal probabilities of exposed atoms at various temperatures, determining activation energies of various types of exposed atoms and analyzing their influence on etching rates of crystal planes. This research advances the understanding of the mechanism of anisotropic wet etching of single-crystal silicon and enhances the optimization of its wet etching process.</p>