<p>Vanadium pentoxide (V₂O₅) thin films have emerged as versatile functional materials with exceptional potential across multiple technological domains, including electrochromic devices, energy storage systems, and advanced sensors. This comprehensive review examines the recent advances in V₂O₅ film technology, with particular emphasis on sophisticated doping strategies and interface engineering approaches that have revolutionized their performance characteristics. The unique layered crystal structure of V₂O₅, featuring van der Waals gaps between V₂O₅ layers, provides exceptional opportunities for intercalation-based applications while presenting challenges in achieving optimal film properties. Recent developments in atomic-level doping control and interface optimization have led to significant breakthroughs in film stability, electronic conductivity, and electrochemical performance. This review critically analyzes synthesis methodologies ranging from traditional physical vapor deposition to emerging atomic layer deposition techniques, with a detailed examination of how processing parameters influence final film properties. We provide comprehensive coverage of metal cation doping (Li⁺, Ti⁴⁺, Mo⁶⁺, W⁶⁺), anion substitution strategies, and innovative co-doping approaches that have enhanced both fundamental properties and device performance. Interface engineering strategies, including substrate selection, buffer layer implementation, and surface functionalization, are examined for their roles in improving film adhesion, electronic properties, and long-term stability. The review identifies critical knowledge gaps in understanding doping mechanisms at the atomic level and provides a roadmap for future research directions, including machine learning-guided optimization and scalable manufacturing approaches for commercial applications.</p>