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<p>The fabrication of sputtered indium tin oxide (ITO) nanorod arrays offers a promising and economical approach to improving light management in photovoltaic devices. In this study, we introduce a novel light-trapping approach using a sputtered ITO nanorod array as a substitute for traditional surface texturing. We successfully fabricated a hydrogenated amorphous silicon (a-Si:H) p-i-n solar cell on the ITO nanorod substrate and compared its performance to a standard reference device. The ITO nanorods, grown at 320&#xa0;°C, exhibited excellent optical properties, with a diffused-to-total transmitted light ratio exceeding 50% at 400&#xa0;nm and over 20% at 800&#xa0;nm, indicating effective scattering across a broad spectral range. The nanorod-driven a-Si:H solar cell, using a significantly thinner intrinsic absorber layer of just 150&#xa0;nm (compared to the conventional 300&#xa0;nm), achieved a power conversion efficiency of 4.97%. Furthermore, it achieved a notable short-circuit current density (J<sub>sc</sub>) of 12.07&#xa0;mA/cm<sup>2</sup>, significantly exceeding that of the planar reference device. These results evidently validate the effectiveness of ITO nanorod arrays in enhancing light absorption and charge collection and highlight their potential as an advanced front transparent conductive oxide (TCO) architecture for advanced silicon-based thin-film solar cells.</p>

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ITO nanorod-driven enhancement of current density in a-Si based p-i-n solar cells

  • 期刊论文

  • 发表日期：

    2026年1月14日

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  • Sukanta Dhar,
  • Sourav Mandal,
  • Gourab Das,
  • Sampad Mukherjee,
  • Chandan Banerjee,
  • H. Saha,
  • A. K. Barua

摘要

The fabrication of sputtered indium tin oxide (ITO) nanorod arrays offers a promising and economical approach to improving light management in photovoltaic devices. In this study, we introduce a novel light-trapping approach using a sputtered ITO nanorod array as a substitute for traditional surface texturing. We successfully fabricated a hydrogenated amorphous silicon (a-Si:H) p-i-n solar cell on the ITO nanorod substrate and compared its performance to a standard reference device. The ITO nanorods, grown at 320 °C, exhibited excellent optical properties, with a diffused-to-total transmitted light ratio exceeding 50% at 400 nm and over 20% at 800 nm, indicating effective scattering across a broad spectral range. The nanorod-driven a-Si:H solar cell, using a significantly thinner intrinsic absorber layer of just 150 nm (compared to the conventional 300 nm), achieved a power conversion efficiency of 4.97%. Furthermore, it achieved a notable short-circuit current density (Jsc) of 12.07 mA/cm2, significantly exceeding that of the planar reference device. These results evidently validate the effectiveness of ITO nanorod arrays in enhancing light absorption and charge collection and highlight their potential as an advanced front transparent conductive oxide (TCO) architecture for advanced silicon-based thin-film solar cells.