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<p>Semiconductor X-ray detectors have attracted considerable attention recently owing to their high sensitivity and excellent stability. Among them, semi-insulating β-Ga<sub>2</sub>O<sub>3</sub> stands out due to its superior thermal stability, high breakdown electric field, and high crystal quality, enabling the fabrication of high-performance detectors suitable for various working environments. In this study, Ni<sup>2+</sup> was introduced into β-Ga<sub>2</sub>O<sub>3</sub> as a deep-level acceptor via doping engineering. A high-resistivity Ni-doped β-Ga<sub>2</sub>O<sub>3</sub> crystal was grown using the edge-defined film-fed growth (EFG) method. X-ray fluorescence spectrometer (XRF) confirmed a Ni doping concentration of 0.544 at%. The crystal exhibited a rocking curve with a full width at half maximum (FWHM) of 65.13 arcsec and clear, symmetric Laue patterns. The ultraviolet–visible (UV–Vis) transmission spectrum showed a cutoff edge at 265.5&#xa0;nm, yielding a bandgap of 4.67&#xa0;eV. Moreover, the semi-insulating behavior of Ni: β-Ga<sub>2</sub>O<sub>3</sub> was indicated by the infrared absorption edge extended beyond 10&#xa0;μm. Raman spectroscopy revealed lattice distortion due to Ni<sup>2+</sup> incorporation, causing shifts in peak positions and intensities without phase change. A metal–semiconductor–metal (MSM)-structured X-ray detector based on Ni: β-Ga<sub>2</sub>O<sub>3</sub> was fabricated and characterized under various biases and dose rates. The device exhibited excellent stability at 1000&#xa0;V with a high sensitivity of 663.36 μC/Gy·cm<sup>2</sup>, outperforming detectors from other semi-insulating β-Ga<sub>2</sub>O<sub>3</sub> crystals due to its superior crystal quality and high breakdown strength. Furthermore, low oxygen vacancy concentration contributed to fast response times of 0.20&#xa0;s (rise) and 0.23&#xa0;s (fall). The detection limit was estimated to be 12.04 nGy/s, highlighting its potential for low-dose X-ray detection.</p>

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Study on single-crystal growth and X-ray detection performance of Ni-doped β-Ga2O3

  • 期刊论文

  • 发表日期：

    2025年11月5日

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  • Boyang Chen,
  • Xinyu Liu,
  • Yiyuan Liu,
  • Zeliang Gao,
  • Kun Zhang,
  • Wenxiang Mu

摘要

Semiconductor X-ray detectors have attracted considerable attention recently owing to their high sensitivity and excellent stability. Among them, semi-insulating β-Ga2O3 stands out due to its superior thermal stability, high breakdown electric field, and high crystal quality, enabling the fabrication of high-performance detectors suitable for various working environments. In this study, Ni2+ was introduced into β-Ga2O3 as a deep-level acceptor via doping engineering. A high-resistivity Ni-doped β-Ga2O3 crystal was grown using the edge-defined film-fed growth (EFG) method. X-ray fluorescence spectrometer (XRF) confirmed a Ni doping concentration of 0.544 at%. The crystal exhibited a rocking curve with a full width at half maximum (FWHM) of 65.13 arcsec and clear, symmetric Laue patterns. The ultraviolet–visible (UV–Vis) transmission spectrum showed a cutoff edge at 265.5 nm, yielding a bandgap of 4.67 eV. Moreover, the semi-insulating behavior of Ni: β-Ga2O3 was indicated by the infrared absorption edge extended beyond 10 μm. Raman spectroscopy revealed lattice distortion due to Ni2+ incorporation, causing shifts in peak positions and intensities without phase change. A metal–semiconductor–metal (MSM)-structured X-ray detector based on Ni: β-Ga2O3 was fabricated and characterized under various biases and dose rates. The device exhibited excellent stability at 1000 V with a high sensitivity of 663.36 μC/Gy·cm2, outperforming detectors from other semi-insulating β-Ga2O3 crystals due to its superior crystal quality and high breakdown strength. Furthermore, low oxygen vacancy concentration contributed to fast response times of 0.20 s (rise) and 0.23 s (fall). The detection limit was estimated to be 12.04 nGy/s, highlighting its potential for low-dose X-ray detection.