Scholarlink

<p>A conjugated semiconductor material with multi-alkyl chains composed of thiazole, thiophene and diketopyrrolopyrrole moieties was designed and synthesized, named PDPP-2T-2Tz. Theoretical simulations confirmed that the molecular structure exhibits excellent coplanarity, which is essential for achieving efficient charge carrier transport. A series of photophysical and electrochemical measurements were conducted to investigate its optical properties and frontier orbital energy levels. Two-dimensional grazing-incidence wide-angle X-ray scattering (2D-GIWAXS) and atomic force microscopy (AFM) results demonstrated the high crystallinity and smooth film morphology of the material. The hole mobility of the annealed film-based transistor materials reached 0.33&#xa0;cm<sup>2</sup>&#xa0;V<sup>−1</sup>&#xa0;s<sup>−1</sup>, demonstrating its potential applications for scalable fabrication of flexible circuits.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Optical, electrochemical and charge transport properties of fully coplanar diketopyrrolopyrrole thiazole-based semiconductor material

  • 期刊论文

  • 发表日期：

    2025年9月13日

查看全文
  • Shiwei Ren,
  • Yujie Wang,
  • Tingwei Huang,
  • Liang Pan,
  • Shuchang Chen,
  • Hao Peng,
  • Yijun Chen,
  • Yue Zhao,
  • Wenxiang Zeng,
  • Abderrahim Yassar,
  • Sichun Wang,
  • Jinyang Chen

摘要

A conjugated semiconductor material with multi-alkyl chains composed of thiazole, thiophene and diketopyrrolopyrrole moieties was designed and synthesized, named PDPP-2T-2Tz. Theoretical simulations confirmed that the molecular structure exhibits excellent coplanarity, which is essential for achieving efficient charge carrier transport. A series of photophysical and electrochemical measurements were conducted to investigate its optical properties and frontier orbital energy levels. Two-dimensional grazing-incidence wide-angle X-ray scattering (2D-GIWAXS) and atomic force microscopy (AFM) results demonstrated the high crystallinity and smooth film morphology of the material. The hole mobility of the annealed film-based transistor materials reached 0.33 cm2 V−1 s−1, demonstrating its potential applications for scalable fabrication of flexible circuits.