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<p>For advanced electronic systems requiring superior performance at high frequencies, elevated power levels, and in challenging environmental conditions, transistors based on InAlN/GaN heterojunction structures have gained substantial attention. These devices, classified as high-electron-mobility transistors (HEMTs), present compelling performance advantages when compared to the more established AlGaN/GaN technology platforms. This comprehensive review examines the evolution and current state of InAlN/GaN HEMT technology, from fundamental material properties to advanced device architectures. We first explore the unique advantages of InAlN barrier layers, including lattice-matching capability with GaN at ~ 17% indium content, higher spontaneous polarization, and superior carrier confinement. The review then analyzes developments in depletion-mode HEMTs that have achieved cutting-edge frequency performance exceeding 400&#xa0;GHz, as well as enhancement-mode variants with advanced gate engineering and dielectric integration. Special attention is given to high-power performance, where breakdown voltages exceeding 550&#xa0;V have been demonstrated, and to thermal stability for operation in extreme environments up to 1000&#xa0;°C. Finally, we examine emerging innovations such as nanoribbon channels and multi-channel designs approaches that promise to extend device capabilities. This comprehensive assessment underscores the significant advancements achieved in InAlN/GaN HEMT technology while acknowledging the critical obstacles that researchers must overcome to completely fulfill its commercial potential across various sectors including telecommunications, aviation, power conversion systems, and detection applications.</p>

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Lattice-matched InAlN/GaN high-electron-mobility transistors (HEMTs)

  • 期刊论文

  • 发表日期：

    2025年7月30日

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  • S. Ravi,
  • C. Priya,
  • A. Mohanbabu,
  • S. Maheswari,
  • A. Lakshmi Narayana,
  • P. Murugapandiyan

摘要

For advanced electronic systems requiring superior performance at high frequencies, elevated power levels, and in challenging environmental conditions, transistors based on InAlN/GaN heterojunction structures have gained substantial attention. These devices, classified as high-electron-mobility transistors (HEMTs), present compelling performance advantages when compared to the more established AlGaN/GaN technology platforms. This comprehensive review examines the evolution and current state of InAlN/GaN HEMT technology, from fundamental material properties to advanced device architectures. We first explore the unique advantages of InAlN barrier layers, including lattice-matching capability with GaN at ~ 17% indium content, higher spontaneous polarization, and superior carrier confinement. The review then analyzes developments in depletion-mode HEMTs that have achieved cutting-edge frequency performance exceeding 400 GHz, as well as enhancement-mode variants with advanced gate engineering and dielectric integration. Special attention is given to high-power performance, where breakdown voltages exceeding 550 V have been demonstrated, and to thermal stability for operation in extreme environments up to 1000 °C. Finally, we examine emerging innovations such as nanoribbon channels and multi-channel designs approaches that promise to extend device capabilities. This comprehensive assessment underscores the significant advancements achieved in InAlN/GaN HEMT technology while acknowledging the critical obstacles that researchers must overcome to completely fulfill its commercial potential across various sectors including telecommunications, aviation, power conversion systems, and detection applications.