Scholarlink

<p>In this work we present a detailed study on improving antimony selenosulfide, Sb<sub>2</sub>(S,Se)<sub>3</sub> thin films hydrothermal deposition, by focusing on precursors deposition time and annealing temperature. Sb<sub>2</sub>(S,Se)<sub>3</sub> is a direct bandgap semiconductor with optoelectronic properties that allow it to be used as an absorber layer in photovoltaic solar cells and other photo-active devices such as photoelectrochemical cells. The present work can be divided into 2 linked optimizations. In the first study, the hydrothermal deposition duration was varied ranging from 2 to 3&#xa0;h:30&#xa0;min, while all the other hydrothermal deposition and annealing parameters were kept the same, such as the maximum annealing temperature of 350&#xa0;°C. The grain size seems unaffected by deposition time and as the time of the hydrothermal deposition increases, there is a tendency for Se loss and an increase in the absorber thickness. In the second study, modifications in the maximum annealing temperature revealed significant morphological and structural changes. The grain size showed a progressive increase with maximum temperature raising from 250 to 400&#xa0;°C, being antagonistic to the film thickness. Our findings led to a 2-step growth model for processing Sb<sub>2</sub>(S,Se)<sub>3</sub> thin films with optimal conditions of 3&#xa0;h:30&#xa0;min hydrothermal process and maximum annealing temperature at 350&#xa0;°C.</p>

错误：搜索内容不能为空，请输入英文关键词
错误：关键词超出字数限制，请精简
高级检索

Refining 2-step hydrothermal deposition of Sb2(S,Se)3 films for solar cell and photoelectrochemical device applications

  • 期刊论文

  • 出版模式：

    开放获取

  • 发表日期：

    2025年7月21日

查看全文
  • V. Lopes,
  • A. Monteiro,
  • G. Mesquita,
  • B. Sieira,
  • X. L. Pinheiro,
  • A. Perdomo,
  • R. M. L. Silva,
  • M. R. Correia,
  • J. P. Teixeira,
  • P. M. P. Salomé,
  • P. A. Fernandes

摘要

In this work we present a detailed study on improving antimony selenosulfide, Sb2(S,Se)3 thin films hydrothermal deposition, by focusing on precursors deposition time and annealing temperature. Sb2(S,Se)3 is a direct bandgap semiconductor with optoelectronic properties that allow it to be used as an absorber layer in photovoltaic solar cells and other photo-active devices such as photoelectrochemical cells. The present work can be divided into 2 linked optimizations. In the first study, the hydrothermal deposition duration was varied ranging from 2 to 3 h:30 min, while all the other hydrothermal deposition and annealing parameters were kept the same, such as the maximum annealing temperature of 350 °C. The grain size seems unaffected by deposition time and as the time of the hydrothermal deposition increases, there is a tendency for Se loss and an increase in the absorber thickness. In the second study, modifications in the maximum annealing temperature revealed significant morphological and structural changes. The grain size showed a progressive increase with maximum temperature raising from 250 to 400 °C, being antagonistic to the film thickness. Our findings led to a 2-step growth model for processing Sb2(S,Se)3 thin films with optimal conditions of 3 h:30 min hydrothermal process and maximum annealing temperature at 350 °C.