Research progress on Cu3SbS4-based thermoelectric materials
摘要
Cu3SbS4, as an eco-friendly thermoelectric material, is notable for its low thermal conductivity and tunable electronic structure, yet its high resistivity and low carrier concentration limit performance. This review systematically discusses modification strategies for enhancing the thermoelectric performance of Cu3SbS4, focusing on elemental doping, second-phase compositing, and structural design. By analyzing its crystal and electronic structures, the origins of its low carrier concentration are clarified, and the impacts of these strategies on carrier concentration, electrical conductivity, Seebeck coefficient, and thermal conductivity are evaluated. Although these strategies have achieved notable progress in enhancing thermoelectric performance, challenges such as the strong coupling between electrical and thermal transport parameters, interfacial oxidation, and elemental segregation in heterogeneous systems remain. Future research should emphasize multi-scale design, integrating band engineering, phonon regulation, and electronic transport optimization through precise doping and nano-twin engineering, hold promise for decoupling thermoelectric parameters and achieving performance breakthroughs. These strategies not only advance the development of the Cu3SbS4 system but also provide a universal research paradigm for the broader family of chalcogenide thermoelectric materials.