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<p>MoS<sub>2</sub> has recently garnered significant attention as a semiconductor-based surface-enhanced Raman scattering (SERS) substrate. However, SERS enhancement and sensitivity are comparatively lower than those of high-conductivity metals, limiting its practical applications. In this study, we report a facile plasma engineering approach to tune the atomic structure of monolayer MoS<sub>2</sub> (ML-MoS<sub>2</sub>) SERS substrates. We demonstrate that Ar–O<sub>2</sub> plasma treatment can induce oxygen incorporation and create physical defects, which alters its electronic properties and enhances the charge transfer efficiency between the MoS<sub>2</sub> substrates and the probe molecules, ultimately leading to a significant enhancement in the SERS performance. When using R6G as a probe molecule, the enhancement factor reaches up to 1.14 × 10<sup>4</sup>, with a minimum detection limit as low as 10<sup>−10</sup>&#xa0;M. Our results open new avenues for optimizing SERS substrates in ML-MoS<sub>2</sub> and other transition metal dichalcogenides films.</p>

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SERS enhancement on monolayer MoS2 films enabled by argon–oxygen plasma treatment

  • 期刊论文

  • 发表日期：

    2025年4月18日

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  • Haoyang He,
  • Maoshu Yang,
  • Yuzhuo Yu,
  • Ai Wang,
  • Junjie Mao,
  • Rui Shu,
  • Zhibin kuang,
  • Yarong Su,
  • Ling Li,
  • Jianqi Zhu

摘要

MoS2 has recently garnered significant attention as a semiconductor-based surface-enhanced Raman scattering (SERS) substrate. However, SERS enhancement and sensitivity are comparatively lower than those of high-conductivity metals, limiting its practical applications. In this study, we report a facile plasma engineering approach to tune the atomic structure of monolayer MoS2 (ML-MoS2) SERS substrates. We demonstrate that Ar–O2 plasma treatment can induce oxygen incorporation and create physical defects, which alters its electronic properties and enhances the charge transfer efficiency between the MoS2 substrates and the probe molecules, ultimately leading to a significant enhancement in the SERS performance. When using R6G as a probe molecule, the enhancement factor reaches up to 1.14 × 104, with a minimum detection limit as low as 10−10 M. Our results open new avenues for optimizing SERS substrates in ML-MoS2 and other transition metal dichalcogenides films.