First-principles calculations of the coupling of F-doping and oxygen vacancies in SnO2 and their lithium storage properties
摘要
SnO2 possesses a high theoretical capacity and excellent chemical stability, making it a suitable candidate for anode material in LIBs. However, its inherently low intrinsic conductivity and the volume effect hinder its Li + storage performance. To address this, we were guided by the idea of increasing the intrinsic conductivity of SnO2, introducing F-doping and oxygen vacancies into the SnO2 structure to constructed F-SnO2−x crystals. The stability and rationality of this structure were investigated through phonon spectrum calculations. Furthermore, the density of states calculations revealed the band gap of the F-SnO2−x crystal is only 0.03 eV, significantly lower than that of SnO2 (2.44 eV). Additionally, the lithium ion diffusion barrier corresponding to F-SnO2−x is 0.33 eV, which is also lower than that of SnO2 (0.72 eV). Consequently, the fast electron/lithium ion transport dynamics is favorable for the F-SnO2−x material in achieving excellent rate performance. Besides, the results of differential charge density analysis indicate that the F-SnO2−x electrode exhibits a charge transfer of 0.83 eV with lithium ions, accompanied by a binding energy of − 5.11 eV, these values surpass those of SnO2 material, suggesting a robust interaction between the F-SnO2−x crystal and lithium ions. Consequently, this strong interaction is advantageous for the electrode to maintain long-term cycling stability. The research outcomes of this work present novel approaches to enhancing the electrical conductivity and lithium storage capabilities of SnO2.