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<p>In order to protect environment and human health, the electrical properties and sintering procedure of lead-free potassium-sodium niobate-based (KNN-based) piezoelectric ceramics were continuously optimized for decades, expecting to replace lead-based piezoelectric ceramics. In this work, AlN is introduced into the 0.955K<sub>0.48</sub>Na<sub>0.52</sub>Nb<sub>0.98</sub>Sb<sub>0.02</sub>O<sub>3</sub>–0.045Bi<sub>0.5</sub>Ni<sub>0.5</sub>ZrO<sub>3</sub> piezoelectric matrix. AlN doping facilitates grain growth, improves the lattice distortion, and reduces oxygen vacancy concentration, thereby contributing to the excellent piezoelectric response. Additionally, AlN component reduces the sintering temperature on account of its high thermal conductivity, suppressing the volatilization of alkali metals. As a result, impressively excellent piezoelectric properties with piezoelectric coefficient of 360 pC/N, electromechanical coupling factors of 49%, and converse piezoelectric coefficient of 512 pm/V measured at 4 kV/mm are achieved in the optimized composition. This work demonstrates that AlN dopant can effectively improve the comprehensive electrical performance of lead-free KNN-based piezoelectric ceramics, facilitating their practical application.</p>

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Origin of the enhanced piezoelectric properties in AlN-doped KNN-based lead-free ceramics

  • 期刊论文

  • 发表日期：

    2024年12月31日

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  • Zhaowen Yang,
  • Yue Xu,
  • Ting Wang,
  • Yu Huan

摘要

In order to protect environment and human health, the electrical properties and sintering procedure of lead-free potassium-sodium niobate-based (KNN-based) piezoelectric ceramics were continuously optimized for decades, expecting to replace lead-based piezoelectric ceramics. In this work, AlN is introduced into the 0.955K0.48Na0.52Nb0.98Sb0.02O3–0.045Bi0.5Ni0.5ZrO3 piezoelectric matrix. AlN doping facilitates grain growth, improves the lattice distortion, and reduces oxygen vacancy concentration, thereby contributing to the excellent piezoelectric response. Additionally, AlN component reduces the sintering temperature on account of its high thermal conductivity, suppressing the volatilization of alkali metals. As a result, impressively excellent piezoelectric properties with piezoelectric coefficient of 360 pC/N, electromechanical coupling factors of 49%, and converse piezoelectric coefficient of 512 pm/V measured at 4 kV/mm are achieved in the optimized composition. This work demonstrates that AlN dopant can effectively improve the comprehensive electrical performance of lead-free KNN-based piezoelectric ceramics, facilitating their practical application.