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<p>Electromagnetic fault injection (EMFI) attacks pose significant threats to the security of integrated circuits. With the advent of second-order attacks, memory storing sensitive data and codes has increasingly become primary target of EMFI attacks. This paper presents an in-depth analysis of dynamic random-access memory (DRAM) under EMFI attacks. Specifically, we first design and conduct a physical EMFI attack experiment on a DRAM chip, based on which four fault models are constructed. Next, we investigate the generation and propagation mechanisms of faults in the DRAM memory array, and further validate the observed fault models through systematic analysis. Finally, two circuit-level countermeasures against EMFI attacks are proposed. Experimental results demonstrate that these countermeasures can effectively enhance DRAM’s resistance to EMFI. This study not only deepens the understanding of DRAM fault models under EMFI but also provides valuable guidance for the security-oriented design of DRAM against such attacks.</p>

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Fault Modeling and Countermeasures for DRAM–Targeted Electromagnetic Fault Injection

  • 期刊论文

  • 发表日期：

    2026年7月28日

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  • Qiang Liu,
  • Longtao Guo,
  • Xianzhao Xia,
  • Zhen Gao

摘要

Electromagnetic fault injection (EMFI) attacks pose significant threats to the security of integrated circuits. With the advent of second-order attacks, memory storing sensitive data and codes has increasingly become primary target of EMFI attacks. This paper presents an in-depth analysis of dynamic random-access memory (DRAM) under EMFI attacks. Specifically, we first design and conduct a physical EMFI attack experiment on a DRAM chip, based on which four fault models are constructed. Next, we investigate the generation and propagation mechanisms of faults in the DRAM memory array, and further validate the observed fault models through systematic analysis. Finally, two circuit-level countermeasures against EMFI attacks are proposed. Experimental results demonstrate that these countermeasures can effectively enhance DRAM’s resistance to EMFI. This study not only deepens the understanding of DRAM fault models under EMFI but also provides valuable guidance for the security-oriented design of DRAM against such attacks.