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<p>Graphene has excellent electrical and mechanical properties, which can be utilized in new devices for Radio Frequency (RF) and microwave circuit applications. A semi-empirical circuit-level model of Graphene Field Effect Transistor (GFET) is used in this paper to propose an RF Low Noise Amplifier (LNA). For the first time, the suggested circuit makes use of distinct mobilities for the charge carriers in the GFET circuit model. With a gate length of 0.5&#xa0;μm and a channel width of 40&#xa0;μm, the GFET model having electron and hole mobility µ<sub>n</sub> = 2000 cm<sup>2</sup>/Vs and µ<sub>p</sub> = 2400 cm<sup>2</sup>/Vs, respectively, shows unity current gain frequency, f<sub>T</sub> = 9&#xa0;GHz. The frequency at which the suggested LNA operated was 2.4&#xa0;GHz, yielding a gain of 7.85 dB and a return loss of -16.5 dB. The developed amplifier has a minimum noise figure of 1.16 dB and a fractional bandwidth of 47.5%. Additionally, when compared to current state-of-the-art related works, the suggested GFET LNA improves the noise performance.&#xa0;</p>

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Design of a Low Noise Amplifier Based on Novel Monolayer Graphene FET

  • 期刊论文

  • 发表日期：

    2025年2月12日

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  • Arjun Lal Kumawat,
  • Anukul Pandey,
  • N. S. Raghava

摘要

Graphene has excellent electrical and mechanical properties, which can be utilized in new devices for Radio Frequency (RF) and microwave circuit applications. A semi-empirical circuit-level model of Graphene Field Effect Transistor (GFET) is used in this paper to propose an RF Low Noise Amplifier (LNA). For the first time, the suggested circuit makes use of distinct mobilities for the charge carriers in the GFET circuit model. With a gate length of 0.5 μm and a channel width of 40 μm, the GFET model having electron and hole mobility µn = 2000 cm2/Vs and µp = 2400 cm2/Vs, respectively, shows unity current gain frequency, fT = 9 GHz. The frequency at which the suggested LNA operated was 2.4 GHz, yielding a gain of 7.85 dB and a return loss of -16.5 dB. The developed amplifier has a minimum noise figure of 1.16 dB and a fractional bandwidth of 47.5%. Additionally, when compared to current state-of-the-art related works, the suggested GFET LNA improves the noise performance.