<p>Bi<sub>1−x</sub>Nd<sub>x</sub>FeO<sub>3</sub> (x = 0.01, 0.03,0.05, and 0.07) nanoparticles have been synthesized by ethylene glycol-based sol-gel technique. Through X-ray diffraction (XRD)technique, the phase purity was confirmed and it was also found that the rhombohedral distorted perovskite structure remain unaltered. The average sizes determined from the XRD peak broadening decreased from 40.7 nm for pristine BFO NPs to 37.5 nm for 7%-doped BFO NPs. The decreasing trend was also corroborated by FE-SEM imaging. Raman spectroscopy shows increased vibrational frequencies for the Bi-O covalent bonds indicating substitution of Nd<sup>3+</sup> ions at Bi<sup>3+</sup>-site. For all the samples, well-defined peaks were obtained in UV-Visible absorption spectra from 441 to 454 nm in the visible region. The band gap was found to increase slightly with Nd-doping from 2.30&#xa0;eV in BFO to 2.33&#xa0;eV in BNFO7 NPs. All the doped NPs show enhanced PL spectra with 1% doped sample exhibiting the maximum enhancement of ∼80%. The M-H loops of BFO and Nd-doped BFO demonstrated a weak ferromagnetic character. Remnant magnetization decreased on Nd-doping, however, coercivity (H<sub>c</sub>) and exchange bias (H<sub>EB</sub>) was found to increase. The maximum value of H<sub>EB,</sub> 47.83 Oe, was observed for 3% -doped NPs along with highest H<sub>c</sub> of 111.17 Oe. One of the key findings is the exceptionally low dielectric loss for higher Nd<sup>3+</sup>-doped samples (BNFO5 and BNFO7) throughout the measurement range up to 200°C, specifically in higher frequency regime (100&#xa0;kHz–1&#xa0;MHz). Nd doped BFO NPs suppressed the real part of the dielectric constant (ε’) and dielectric loss (tan δ) at higher doping concentrations (for BNFO7), which offers improved insulating characteristics in the low-temperature regime. Such optimized doping with preserved rhombohedral structure and better charge retention opens new vistas for diverse applications in capacitors, thermistors, and electromagnetic devices.</p>

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High-temperature dielectric stability, enhanced exchange bias effect and optical tuning in BiFeO₃ nanoparticles through Nd-doping

  • Subhasmita Jena,
  • Siddhartha S. Parida,
  • Akankshya Nayak,
  • Budhendra Singh,
  • Amiya Priyam,
  • Bhavya Bhushan

摘要

Bi1−xNdxFeO3 (x = 0.01, 0.03,0.05, and 0.07) nanoparticles have been synthesized by ethylene glycol-based sol-gel technique. Through X-ray diffraction (XRD)technique, the phase purity was confirmed and it was also found that the rhombohedral distorted perovskite structure remain unaltered. The average sizes determined from the XRD peak broadening decreased from 40.7 nm for pristine BFO NPs to 37.5 nm for 7%-doped BFO NPs. The decreasing trend was also corroborated by FE-SEM imaging. Raman spectroscopy shows increased vibrational frequencies for the Bi-O covalent bonds indicating substitution of Nd3+ ions at Bi3+-site. For all the samples, well-defined peaks were obtained in UV-Visible absorption spectra from 441 to 454 nm in the visible region. The band gap was found to increase slightly with Nd-doping from 2.30 eV in BFO to 2.33 eV in BNFO7 NPs. All the doped NPs show enhanced PL spectra with 1% doped sample exhibiting the maximum enhancement of ∼80%. The M-H loops of BFO and Nd-doped BFO demonstrated a weak ferromagnetic character. Remnant magnetization decreased on Nd-doping, however, coercivity (Hc) and exchange bias (HEB) was found to increase. The maximum value of HEB, 47.83 Oe, was observed for 3% -doped NPs along with highest Hc of 111.17 Oe. One of the key findings is the exceptionally low dielectric loss for higher Nd3+-doped samples (BNFO5 and BNFO7) throughout the measurement range up to 200°C, specifically in higher frequency regime (100 kHz–1 MHz). Nd doped BFO NPs suppressed the real part of the dielectric constant (ε’) and dielectric loss (tan δ) at higher doping concentrations (for BNFO7), which offers improved insulating characteristics in the low-temperature regime. Such optimized doping with preserved rhombohedral structure and better charge retention opens new vistas for diverse applications in capacitors, thermistors, and electromagnetic devices.