<p>High electron mobility, optical transparency, and low-temperature processing suitability of amorphous oxide semiconductors (AOS-SCs) have transformed them into a new class of advanced materials for the next generation of thin-film transistors (TFTs). AOS materials such as indium gallium zinc oxide (IGZO), zinc tin oxide (ZTO), and indium zinc oxide (IZO) demonstrate energy-efficient and superior carrier transport due to isotropic overlap of metal cation s-orbitals, enabling high mobility even in disordered structures, in contrast to conventional amorphous silicon. As a response to these characteristics, AOS-based TFTs are considered attractive materials for wearables, flexible electronics, broad scope sensor platforms, and powerful display technologies. Herein we summarize the recent progress in AOS materials for high-performance TFT applications. In the following review basic electronic structure and charge transportation mechanisms of AOS-SCs are investigated. This works well as the synthesis strategy (sputtering, solution processing, atomic layer deposition, new printing techniques, etc.) was applied and investigated, with corresponding impact on the film quality, on overall device performance. The critical analysis consists on key device structures, interface engineering methodologies, and defect control methodologies enhancing stability and mobility of such devices. The study also addresses how nanostructured oxide systems, heterostructures and dopants can enhance the functionality of devices. Next, future research trends and scalability issues are covered as well as emerging applications in transparent circuits, neuromorphic computing and flexible electronics. This review provides detailed consideration of materials design and device engineering methods required to develop next-generation high-performance oxide semiconductor TFT technologies.</p>