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<p>Currently, it is challenging to design meta-absorbers for the high-frequency range that exhibit enhanced absorption and dissipation. Electromagnetic pollution, caused by the increase in high-frequency waves from electronic devices, has had a significant impact on people and other living organisms. Crucial to solving the problems is the synthesis of ferrite and the design of meta-absorbers based on it. Sm<sup>3+</sup> doped Sr<sub>4</sub>Ni<sub>2</sub> U-type hexaferrite, Sr<sub>4</sub>Ni<sub>2</sub>Sm<sub>x</sub>Fe<sub>36−x</sub>O<sub>60</sub>, within the range of (0.0 ≤ x ≤ 0.075), was synthesized using the sol-gel auto-combustion method. XRD evidence validates the crystal structure of the U phase in hexaferrite. FTIR spectra demonstrate the presence of the ferrite phase, while the force constant and molecular bond lengths diminish with Sm<sup>3+</sup>. Raman analysis verifies the presence of Raman-active vibrations at 419.73, 479.51, 536.60, 625.69, and 688.30&#xa0;cm<sup>− 1</sup>, respectively. UV-Vis analysis confirms an increase in the optical band gap from 2.15&#xa0;eV to 2.46&#xa0;eV with elevated Sm<sup>3+</sup> concentrations. Dielectric losses increased with frequency from 1 to 3.5&#xa0;GHz, then reduced from 3.5&#xa0;GHz to 5.5&#xa0;GHz. The meta-absorbers were designed and simulated. The TE mode of Sm<sup>3+</sup>-doped samples at varying concentrations exhibited an enhancement with increasing frequency. Absorptivity decreases as the angle of incidence increases. Doped Sm-Sr ferrites with a U-type hexagonal structure are useful for high-frequency applications in nanodevice stealth technology and for electromagnetic interference shielding.</p>

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Exploring the synergistic absorption, energy band gap, and mobility range dielectric evaluations of Sr4Ni2SmxFe36−xO60 U-type hexagonal ferrites: meta absorber design and simulations

  • 期刊论文

  • 发表日期：

    2026年5月4日

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  • Marwa Ijaz,
  • Majid Niaz Akhtar,
  • Asif Jamil,
  • Marcus Vinicius Castegnaro,
  • Imran Shakir,
  • Fatimah M. A. Alzahrani,
  • Maira Younas,
  • Sami Ullah,
  • Shagufta Gulbadan,
  • M. S. Al-Buriahi,
  • Muhammad Azhar Khan

摘要

Currently, it is challenging to design meta-absorbers for the high-frequency range that exhibit enhanced absorption and dissipation. Electromagnetic pollution, caused by the increase in high-frequency waves from electronic devices, has had a significant impact on people and other living organisms. Crucial to solving the problems is the synthesis of ferrite and the design of meta-absorbers based on it. Sm3+ doped Sr4Ni2 U-type hexaferrite, Sr4Ni2SmxFe36−xO60, within the range of (0.0 ≤ x ≤ 0.075), was synthesized using the sol-gel auto-combustion method. XRD evidence validates the crystal structure of the U phase in hexaferrite. FTIR spectra demonstrate the presence of the ferrite phase, while the force constant and molecular bond lengths diminish with Sm3+. Raman analysis verifies the presence of Raman-active vibrations at 419.73, 479.51, 536.60, 625.69, and 688.30 cm− 1, respectively. UV-Vis analysis confirms an increase in the optical band gap from 2.15 eV to 2.46 eV with elevated Sm3+ concentrations. Dielectric losses increased with frequency from 1 to 3.5 GHz, then reduced from 3.5 GHz to 5.5 GHz. The meta-absorbers were designed and simulated. The TE mode of Sm3+-doped samples at varying concentrations exhibited an enhancement with increasing frequency. Absorptivity decreases as the angle of incidence increases. Doped Sm-Sr ferrites with a U-type hexagonal structure are useful for high-frequency applications in nanodevice stealth technology and for electromagnetic interference shielding.